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PD55035S Datasheet

  • PD55035S

  • RF POWER TRANSISTORS The LdmoST Plastic FAMILY

  • 183.53KB

  • 14頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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PD55035
PD55035S
RF POWER TRANSISTORS
The LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
COMMON SOURCE CONFIGURATION
鈥?/div>
P
OUT
= 35 W with 16.9 dB gain @ 500 MHz /
12.5 V
鈥?/div>
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55035 boasts the excellent gain,
linearity and reliability of ST鈥檚 latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55035鈥檚
superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
ORDER CODE
PD55035
PowerSO-10RF
(formed lead)
BRANDING
PD55035
PowerSO-10RF
(straight lead)
ORDER CODE
PD55035S
BRANDING
PD55035S
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
40
鹵
20
7
95
165
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.0
擄C/W
March, 21 2003
1/14

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