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PD55003S Datasheet

  • PD55003S

  • RF POWER TRANSISTORS The LdmoST Plastic FAMILY

  • 19頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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PD55003
PD55003S
RF POWER TRANSISTORS
The LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
COMMON SOURCE CONFIGURATION
鈥?/div>
P
OUT
= 3 W with 17 dB gain @ 500 MHz / 12.5 V
鈥?/div>
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55003 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003 boasts the excellent gain,
linearity and reliability of ST鈥檚 latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55003鈥檚 su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55003
BRANDING
PD55003
PowerSO-10RF
(Straight lead)
ORDER CODE
PD55003S
BRANDING
PD55003S
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
40
鹵
20
2.5
31.7
165
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
3.0
擄C/W
March, 21 2003
1/19

PD55003S 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 500MHz

  • 17dB

  • 12.5V

  • 2.5A

  • -

  • 50mA

  • 3W

  • 40V

  • PowerSO-10 裸露底部焊盤

  • PowerSO-10

  • 管件

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