Numonyx鈩?StrataFlash
(P30)
廬
Embedded Memory
Datasheet
Product Features
High performance
鈥?85 ns initial access
鈥?52 MHz with zero wait states, 17ns clock-to-data output
synchronous-burst read mode
鈥?25 ns asynchronous-page read mode
鈥?4-, 8-, 16-, and continuous-word burst mode
鈥?Buffered Enhanced Factory Programming (BEFP) at 5
渭s/
byte (Typ)
鈥?1.8 V buffered programming at 7
渭s/byte
(Typ)
鈥?Multi-Level Cell Technology: Highest Density at Lowest
Cost
鈥?Asymmetrically-blocked architecture
鈥?Four 32-KByte parameter blocks: top or bottom
configuration
鈥?128-KByte main blocks
Security
鈥?One-Time Programmable Registers:
鈥?64 unique factory device identifier bits
鈥?2112 user-programmable OTP bits
鈥?Selectable OTP Space in Main Array:
鈥?Four pre-defined 128-KByte blocks (top or bottom
configuration)
鈥?Up to Full Array OTP Lockout
鈥?Absolute write protection: V
PP
= V
SS
鈥?Power-transition erase/program lockout
鈥?Individual zero-latency block locking
鈥?Individual block lock-down
Architecture
Software
鈥?20
渭s
(Typ) program suspend
鈥?20
渭s
(Typ) erase suspend
鈥?Numonyx鈩?Flash Data Integrator optimized
鈥?Basic Command Set and Extended Command Set
compatible
鈥?Common Flash Interface capable
Voltage and Power
鈥?V
CC
(core) voltage: 1.7 V 鈥?2.0 V
鈥?V
CCQ
(I/O) voltage: 1.7 V 鈥?3.6 V
鈥?Standby current: 20渭A (Typ) for 64-Mbit
鈥?4-Word synchronous read current:
13 mA (Typ) at 40 MHz
Quality and Reliability
鈥?Operating temperature: 鈥?0 擄C to +85 擄C
鈥?Minimum 100,000 erase cycles per block
鈥?ETOX鈩?VIII process technology
Density and Packaging
鈥?56- Lead TSOP package (64, 128, 256,
512- Mbit)
鈥?64- Ball Numonyx鈩?Easy BGA package (64,
128, 256, 512- Mbit)
鈥?Numonyx鈩?QUAD+ SCSP (64, 128, 256,
512- Mbit)
鈥?16-bit wide data bus
Order Number: 306666-11
November 2007