Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual low leakage, platinum barrier,
schottky rectifier diodes in a plastic
envelope suitable for surface
mounting, featuring low forward
voltage drop, absence of stored
charge. and guaranteed reverse
surge capability. The devices are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
PBYR2545CTB series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
PARAMETER
MAX.
MAX.
MAX.
UNIT
V
V
A
PBYR25- 35CTB 40CTB 45CTB
Repetitive peak reverse
35
40
45
voltage
Forward voltage
0.62
0.62
0.62
Average output current
30
30
30
(both diodes conducting)
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
anode 1
cathode
anode 2
cathode
PIN CONFIGURATION
mb
SYMBOL
a1
1
2
1
3
a2
3
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-35
35
60
35
MAX.
-40
40
80
40
30
43
30
135
150
-45
45
100
45
UNIT
V
V
V
A
A
A
A
A
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
mb
鈮?/div>
136 藲C
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode
square wave;
未
= 0.5;
T
mb
鈮?/div>
130 藲C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
碌s; 未
= 0.5;
T
mb
鈮?/div>
130 藲C
t = 10 ms
t = 8.3 ms
sinusoidal T
j
= 125 藲C prior
to surge; with reapplied
V
RRM(max)
I
2
t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode.
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode.
Storage temperature
Operating junction temperature
-
-
-
-65
-
91
1
1
175
150
A
2
s
A
A
藲C
藲C
August 1996
1
Rev 1.000
1
2
3
4
5
