CALIFORNIA MICRO DEVICES
PAC DN004
Applications
聲 I/O port: protection for cellular phones,
notebooks computers, PDA, etc.
聲 ESD protection for sensitive
electronic equipment.
聲 ESD protection for applications where
low capacitive loading is required.
2 CHANNEL ESD PROTECTION ARRAY
Features
聲 2-channel ESD protection
聲 15KV ESD protection (HBM)
聲 8KV contact discharge ESD protection
per IEC 61000-4-2
聲 Low loading capacitance, 3 pF typ.
聲 Miniature 4-pin SOT-143 package
Product Description
The PAC聶 DN004 is a diode array designed to provide two channels of ESD protection for electronic components or sub-
systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the positive (V
P
) or negative
(V
N
) supply. The PAC聶 DN004 will protect against ESD pulses up to 15 KV Human Body Model, and 8KV contact discharge
per International Standard IEC 61000-4-2.
This device has identical characteristics as the PAC聶 DN006 (6 channel array). They can be used together in order to provide
a larger number of protected inputs if required. This device is particularly well-suited for portable electronics (e.g. cellular
phones, PDAs, notebook computers) because of its small package footprint, high ESD protection level, and low loading
capacitance. It is also suitable for protecting video output lines and I/O ports in computers and peripheral equipment.
ABSOLUTE MAXIMUM RATINGS
Diode Forward DC Current
(Note 1)
20mA
擄
Storage Temperature
-65 C to 150
擄
C
Operating Temperature Range
-20擄C to 85擄C
DC Voltage at any Channel Input V
N
-0.5V to V
P
+0.5V
Note 1: Only one diode conducting at a time.
SCHEMATIC CONFIGURATION
4
V
P
I/O 1
2
3
I/O 2
1
V
N
Parameter
Operating Supply Voltage ( V
P
- V
N
)
Supply Current, (V
P
- V
N
) = 5.5V, T=25擄C
D iode Forward Voltage, I
F
= 20mA, T = 25擄C
ESD Protection
Peak D ischarge Voltage at any Channel Input, in-system
(Note 2)
000
Human Body Model, Method 3015
(Note 3, 4)
000
Contact D ischarge per IEC 61000-4-2
(Note
5
)
Channel Clamp Voltage @ 15KV ESD HBM, T = 25擄C
000
Positive transients
000
Negative transients
Channel Leakage Current, T = 25擄C
Channel Input Capacitance (Measured @ 1 MHz)
V
P
= 5V, V
N
= 0V, V
IN
= 2 .5 V
(Note 4)
Package Power Rating
Note
Note
Note
Note
2:
3:
4:
5:
STANDARD SPECIFICATIONS
Min.
0.65 V
鹵15 KV
鹵8 KV
Typ.
Max.
5.5 V
10 碌 A
0.95 V
(Notes 3, 4)
鹵0.1 碌A(chǔ)
3pF
V
P
+ 13.0 V
V
N
- 13.0 V
鹵1.0 碌A(chǔ)
6pF
225mW
From I/O pins to V
P
or V
N
only. V
P
bypassed to V
N
with 0.2
碌F
ceramic capacitor.
Human Body Model per MIL-STD-883, Method 3015, C
Discharge
=100pF, R
Discharge
=1.5K
鈩?/div>
, V
P
=5.0V, V
N
=GND.
This parameter is guaranteed by characterization.
Standard IEC 61000-4-2 with C
Discharge
=150pF, and R
Discharge
=330
鈩?/div>
, V
P
=5V, V
N
=GND.
漏1999 California Micro Devices Corp. All rights reserved.
P/Active
廬
is a registered trademark and PAC is a trademark of California Micro Devices.
11/99
C0280498D
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
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