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uPA505T Datasheet

  • uPA505T

  • MOS Field Effect Transistor

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA505T
N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
The
碌
PA505T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.32
+0.1
鈥?.05
+0.1
1.5 0.65
鈥?.15
0.16
+0.1
鈥?.06
FEATURES
鈥?Two source common MOS FET circuits in package the
same size as SC-59
鈥?Complementary MOS FETs are provided in one package.
鈥?Automatic mounting supported
2.8 鹵0.2
0 to 0.1
0.95
0.95
0.8
1.1 to 1.4
1.9
2.9 鹵0.2
PIN CONNECTION (Top View)
Marking: FA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
*
P
T
T
ch
T
stg
RATINGS
50/鈥?0
鈥?/div>
鹵20/+
16
鈥?/div>
鹵100/+
100
鈥?/div>
鹵200/+
200
300 (TOTAL)
150
鈥?5 to +150
UNIT
V
V
mA
mA
mW
藲C
藲C
*
PW
鈮?/div>
10 ms, Duty Cycle
鈮?/div>
50 %
Note
The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively.
Document No. G11241EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996

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