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uPA503T Datasheet

  • uPA503T

  • MOS Field Effect Transistor

  • 60.92KB

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA503T
P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
The
碌
PA503T is a mini-mold device provided with
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.
0.32
鈥?.05
+0.1
+0.1
PACKAGE DIMENSIONS
(in millimeters)
+0.1
FEATURES
鈥?Two source common MOS FET circuits in package
鈥?Complement to
碌
PA502T
鈥?Automatic mounting supported
2.8 鹵 0.2
the same size as SC-59
1.5
0.65
鈥?.15
0.16
鈥?.06
0 to 0.1
0.95
0.95
1.9
0.8
1.1 to 1.4
2.9 鹵 0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
*
P
T
T
ch
T
stg
RATINGS
鈥?0
+16
鈥?00
鈥?00
300 (TOTAL)
150
鈥?5 to +150
UNIT
V
V
mA
mA
mW
藲C
藲C
PIN CONNECTION
(Top view)
*
PW
鈮?/div>
10 ms, Duty Cycle
鈮?/div>
50 %
Document No. G11239EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996

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