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PA2423G

2.4 GHz Bluetooth Class 1 Power Amplifier IC

Preliminary Information

Applications

Bluetooth

tm

Class 1

USB Dongles

Laptops

Access Points

Cordless Piconets

Flip chip and chip-on-board applications

Product Description

A monolithic, high-efficiency, silicon-germanium

power amplifier IC, the PA2423G is designed for

Class 1 Bluetooth

tm

2.4 GHz radio applications. It

delivers +22.5 dBm output power with 47% power-

added efficiency 鈥?making it capable of

overcoming insertion losses of up to 2.5 dB

between amplifier output and antenna input in

tm

Class 1 Bluetooth applications.

The amplifier features:

an analog control input for improving PAE at

reduced output power levels;

a digital control input for controlling power up

and power down modes of operation.

An on-chip ramping circuit corrects the turn-on/off

switching of amplifier output with less than 3 dB

overshoot, meeting the Bluetooth

tm

specification 1.1.

The PA2423G operates at 3.3V DC. At typical

output power level (+22.5 dBm), its current

consumption is 120 mA.

Shipping

Method

Diced wafer

Waffle pack

The silicon/silicon-germanium structure of the

PA2423G provides high thermal conductivity and

a subsequently low junction temperature. This

device is capable of operating at a duty cycle of

100 percent.

Features

+22.5 dBm at 47% Power Added Efficiency

Low current 80 mA typical @ Pout=+20 dBm

Temperature stability better than 1dB

Power-control and Power-down modes

-40C to +85C temperature range

Gold bump bare die (0.63mm x 0.96mm)

Ordering Information

Part

PA2423G

PA2423G-EV

Package

Gold bump bare

die

Evaluation kit

Functional Block Diagram

V

CTL

V

CC0

V

RAMP

Bias Generator

Ramp

Circuitry

IN

Stage 1

Interstage

Match

Stage 2

OUT/ V

CC2

GND

V

CC1

GND

DOC # 05PDS003

Rev 5

07/26/2001

Page 1

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PA2423G-EV相關(guān)型號(hào)PDF文件下載

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  2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Inf...
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• PA2423L
  英文版
  2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Inf...
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