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N

EW

P6SMB6.8A

THRU

P6SMB200A

v

Central

DESCRIPTION

TM

Semiconductor Corp.

UNI-DIRECTIONAL

GLASS PASSIVATED JUNCTION

TRANSIENT VOLTAGE SUPPRESSOR

600 WATTS, 6.8 THRU 200 VOLTS

The CENTRAL SEMICONDUCTOR P6SMB6.8A

Series types are Surface Mount Uni-Directional

Glass Passivated Junction Transient Voltage

Suppressors designed to protect voltage sensitive

components from high voltage transients.

THIS

DEVICE IS MANUFACTURED WITH A GLASS

PASSIVATED CHIP FOR OPTIMUM

RELIABILITY.

Note: For Bi-directional devices, please refer to

the P6SMB6.8CA Series data sheet.

SMB CASE

e y

i db

pcf

Sei

BREAKDOWN

VOLTAGE

MAXIMUM RATINGS

(TA=25擄C )

Peak Power Dissipation

Peak Forward Surge Current (JEDEC Method)

Operating and Storage

Junction Temperature

ELECTRICAL CHARACTERISTICS

(TA=25擄C )

BREAKDOWN VOLTAGE

WORKING

PEAK

TYPE NO.

VBR

@ IT

SYMBOL

PPM

IFSM

TJ,Tstg

600

100

-65 to +150

UNITS

W

A

擄C

MAXIMUM

REVERSE

LEAKAGE

@R RWM

I V

mA

MAXIMUM

REVERSE

SURGE

I

CURRENT

RSM

MAXIMUM

REVERSE

VOLTAGE

VRSM

@ IRSM

MAXIMUM

TEMP.

COEFFICIENT

of VBR

MARKING

CODE

REVERSE

V

VOLTAGE

RWM

VOLTS

MIN

P6SMB6.8A

P6SMB7.5A

P6SMB8.2A

P6SMB9.1A

P6SMB10A

P6SMB11A

P6SMB12A

P6SMB13A

P6SMB15A

P6SMB16A

P6SMB18A

P6SMB20A

6.45

7.13

7.79

8.65

9.5

10.5

11.4

12.4

14.3

15.2

17.1

19.0

NOM

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

MAX

7.14

7.88

8.61

9.55

10.5

11.6

12.6

13.7

15.8

16.8

18.9

21.0

mA

10

10

10

1

1

1

1

1

1

1

1

1

VOLTS

5.8

6.4

7.02

7.78

8.55

9.4

10.2

11.1

12.8

13.6

15.3

17.1

A

57

53

50

45

41

38

36

33

28

27

24

22

VOLTS

10.5

11.3

12.1

13.4

14.5

15.6

16.7

18.2

21.2

22.5

25.2

27.7

%/擄C

0.057

0.061

0.065

0.068

0.073

0.075

0.078

0.081

0.084

0.086

0.088

0.090

C6V8A

C7V5A

C8V2A

C9V1A

C10A

C11A

C12A

C13A

C15A

C16A

C18A

C20A

1000

500

200

50

10

5

5

5

5

5

5

5

414

next

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