INFRARED DETECTOR
MCT photoconductive detector
P3257 series, P4249-08
10 碌m band infrared detector with high sensitivity and high-speed response
Features
Applications
Custom devices not listed in this catalog are also
available with different spectral response, active
area sizes and number of element.
l
Wide product lineups including non-cooled type,
thermoelectrically cooled type and micro-cooled type
Easy-to-use infrared detector modules with preamp
available.
l
High-speed response, high sensitivity in the 10 碌m
band detection
l
Photoconductive element that decreases its resistance
by input of infrared light
l
Custom devices available
l
Thermal imaging
l
Remote sensing
l
FTIR
l
CO
2
laser detection
l
Infrared spectrophotometer
Accessories (Optional)
l
Valve operator
A3515
l
Amplifiers for dewar type MCT photoconductive detector
C5185
l
Infrared detector module with preamp
P7752-10
(with P3257-10)
I
Specification / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material
鉃€
/ZnS
鉃?/div>
/ZnS
Package
Cooling
Active area
(mm)
0.025 脳 0.025
0.1 脳 0.1
1脳1
0.5 脳 0.5 *
Absolute maximum ratings
Operating
Storage
Allowable
temperature
temperature
current
Topr
Tstg
(mA)
(擄C)
(擄C)
10
20
-40 to +60
-55 to +60
40
30
P3257-25
P3257-01
P3257-10
P4249-08
*1: 8 elements array
Metal dewar
Liquid
nitrogen
I
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Photo
Peak
Cut-off
condition
sensitivity *
sensitivity
wavelength
Element
S
wavelength
temperature
lc
l=lp
lp
T
(擄C)
P3257-25
P3257-01
P3257-10
P4249-08
-196
(碌m)
10.0
(碌m)
12.0
(V/W)
1 脳 10
#
3 脳 10
"
1 脳 10
!
2 脳 10
!
D
*
(500, 1200, 1)
Rise time
D
*
tr
(lp, 1200, 1) 0 to 63 %
(碌s)
0.6
Dark
resistance
Rd
(W)
40
80
40
Type No.
Min.
Typ.
1/2
(cm路Hz /W) (cm路Hz
1/2
/W)
(cm路Hz
1/2
/W)
1 脳 10
2 脳 10
4.0 脳 10
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.
1
1
2
3
