INFRARED DETECTOR
MCT photoconductive detector
P3257/P3981/P2750 series
Non-cooled type and TE-cooled type suitable for long, continuous operation
Features
The band gap can be adjusted by controlling the composition
ratio of HgTe and CdTe. Utilizing this fact, various types are
available in different spectral characteristics.
l
Photoconductive element that decreases its resistance
by input of infrared light
l
Custom devices available
Custom devices not listed in this catalog are also
available with different spectral response, active area
size and number of element.
l
Easy-to-use infrared detector modules with preamp
available
Applications
l
Choice of spectral response (up to 12 碌m)
l
Radiation thermometer
l
Gas analyzer
l
Infrared spectrophotometer
l
FTIR
l
CO
2
laser monitor
Accessories (Optional)
l
Heatsink for one-stage TE-cooler A3179
l
Heatsink for two-stage TE-cooler A3179-01
l
Heatsink for three-stage TE-cooler A3179-04
l
Temperature controller C1103-05 (-25 to -75 藲C)
C1103-07 (20 to -30 藲C)
l
Preamp
C5185-01 (P3981/P2750 series)
l
Infrared detector modules with preamp
P4631-10 (P3257-31)
P4631
(P3981)
P4631-04 (P2750)
I
General ratings / Absolute m axim um ratings
Type No.
P3257-30
P3257-31
Dimensional
outline/
Window
material *
鉃€/Se
鉃?Se
Package
Cooling
Active
area
鉃?S
P3981
鉃?S
P3981-01
鉃?S
P2750-08
P2750
鉃?S
P2750-06
*1: W indow material S : Sapphire glass
Se:
ZnSe
(mm )
with BNC connector
Non-cooled
One-stage
TO-8
TE-cooled
TO-8
1脳1
Two-stage
TO-66
TE-cooled
TO-8
Three-stage
TO-3
TE-cooled 0.25 脳 0.25
Absolute maximum ratings
Storage
Thermistor TE-cooler
Operating
Allowable
allowable
power
temperature temperature
current
Topr
Tstg
current
dissipation
(mW )
(A)
(mA)
(擄C)
(擄C)
-
-
50
1.5
0.2
50
3
3
6
6
3
-40 to +60
-55 to +60
1.0
I
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Peak
Photo
condition
Cut-off
sensitivity
sensitivity *
2
Element
wavelength
wavelength
S
temperature
lc
l=lp
*
3
lp
T
(擄C)
25
0
(碌m)
6.0
6.5
(碌m)
11.0
11.5
(V/W )
2 脳 10
-3
5 脳 10
-3
D
*
(500, 1200, 1) *
4
D
*
!
(l p * , 1200, 1)
NEP
l=lp
*
3
Dark
Rise time
resistance
tr
0 to 63 %
Rd
(碌s)
1 (ns)
1 (ns)
10
(W)
30
35
600
Type No.
P3257-30
P3257-31
P3981
3.6
3.7
1 脳 10
4
2.0 脳 10
8
2.0 脳 10
9
5.0 脳 10
10
-30
P3981-01
P2750-08
4.8
5.4
3 脳 10
2
1.0 脳 10
8
6.0 脳 10
8
4.0 脳 10
9
P2750
2 脳 10
3
-60
4.8
5.5
5.0 脳 10
8
3.0 脳 10
9
2.0 脳 10
10
P2750-06
3 脳 10
3
*2: Photo sensitivity changes with the bias current. The values in the above table are measured
*3: P3257-30/-31:
l=10.6
碌m
*4: P3257-30/-31: (800, 1200, 1)
Typ.
Min.
(cm路 Hz
1/2
/W) (cm路 Hz
1/2
/W)
(cm 路Hz
1/2
/W ) (W /Hz
1/2
)
5.0 脳 10
5
3.0 脳 10
6
2.0 脳 10
5
5.0 脳 10
-7
1.0 脳 10
6
6.0 脳 10
6
5.0 脳 10
5
2.0 脳 10
-7
2.0 脳 10
-12
-11
2.5 脳 10
2
160
5.0 脳 10
-12
3
200
1.3 脳 10
-12
with the optimum bias current.
1
1
2
3
4
