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Phototransistor (OPB702) or
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40擄C to +85擄C
Lead soldering temperature (1/16 inch [1.6 mm] from case for 5 sec. with soldering
iron) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240擄C
(2)
Input Diode
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Peak Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(1)
Output Photosensor
Collector-Emitter Voltage - OPB702 & OPB702R . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
OPB702D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Emitter-Collector Voltage - OPB702 & OPB702D . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Power Dissipation - OPB702 & OPB702D & OPB702R . . . . . . . . . . . . . . . . 100 mW
(1)
NOTES:
(1) Derate linearly 1.67 mW/擄C above 25擄C.
(2) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(3) d is the distance from the assembly face to the reflective surface.
(4) Measured using Eastman Kodak gray card. The white side of the card is used as a 90%
diffuse reflectance surface. Reference Eastman Kodak, Catalog #E152 7795.
(5) All parameters tested using pulse techniques.
(6) Lead spacing controlled at body egress.
PRECAUTIONS:
Exposure of the plastic body to chlorinated hydrocarbons and ketones such
as thread lock and instant adhesive products will degrade the plastic body. Cleaning agents
methanol and isopropanol are recommended. Spray or wipe do not submerge.
Photodarlington (OPB702D) or
Phototransistor with base-emitter
resistor (OPB702R)
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Low cost plastic housing
Description
The OPB702 family consists of an
infrared emitting diode and a choice of
NPN silicon phototransistor (OPB702),
photodarlington (OPB702D), or
base-emitter resistor for low light
suppresion (OPB702R). The IR LED
and phototransistor are mounted
side-by-side on converging optical axes,
in a black plastic housing.
Both parts are constructed using either
OP165 or OP265 series LEDs. The
OPB702 uses and OP505 type. The
OPB702D uses an OP535 type. The
OPB702R uses an OP705.
Custom electrical, wire or cabling is
available. Contact your local
representative or Optek for more
information.
Visit our website at www.optekinc.com
or email us at sensors@optekinc.com
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972) 323-2396
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