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ON2173 Datasheet

  • ON2173

  • Reflective Photosensors (Photo Reflectors)

  • 3頁

  • PANASONIC

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Reflective Photosensors (Photo Reflectors)
CNB1009
(ON2173)
Reflective Photosensor
Overview
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Fast response : t
r
, t
f
= 6
碌s
(typ.)
Small size, light weight
9.5鹵0.3
6.5鹵0.3
4.0鹵0.2
Unit : mm
12.0鹵0.3
(4.0)
LED
2-酶2.3
T.R
1.0
7.4鹵0.2
1.0
(1.0)
19.0鹵0.3
2-9.5鹵0.2
1.0
Features
酶2.2
(2.54)
Detection of paper, film and cloth
Detection of coin and bill
Optical mark reading
2
Detection of position and edge
1
Start, end mark detection of magnetic tape
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector to emitter voltage
Output (Photo Emitter to collector voltage
transistor)
Collector current
Collector power dissipation
Temperature
Operating ambient temperature
Storage temperature
Symbol Ratings
V
R
I
F
P
D*1
V
CEO
V
ECO
I
C
P
C*2
T
opr
3
50
75
20
5
30
100
鈥?5 to +85
Unit
V
mA
mW
V
V
mA
mW
藲C
藲C
(Note) ( ) Dimension is reference
*1
T
stg
鈥?0 to +100
Input power derating ratio is
1.0 mW/藲C at Ta
鈮?/div>
25藲C.
*2
Output power derating ratio is
1.34 mW/藲C at Ta
鈮?/div>
25藲C.
Electrical Characteristics
(Ta = 25藲C)
Parameter
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between pins
Output characteristics Collector cutoff current
Collector to emitter capacitance
Collector current
Transfer
characteristics Response time
*1
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C*1
I
F
= 50mA
V
R
= 3V
Conditions
min
V
R
= 0V, f = 1MHz
V
CE
= 10V
V
CE
= 10V, f= 1MHz
V
CC
= 10V, I
F
= 20mA, R
L
= 100鈩?/div>
100
t
r*2
, t
f*3
V
CC
= 10V, I
C
= 1mA, R
L
= 100鈩?/div>
*2
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
I
C
V
CC
I
F
*3
;;
;
;;
;;
;
;;
;;
d = 5 mm
Time required for the collector current to increase from
10% to 90% of its final value.
Time required for the collector
90%
10%
current to decrease from 90%
to 10% of its initial value.
t
r
t
f
R
L
;;
Standard white paper (Reflective ratio 90%)
Note) The part number in the parenthesis shows conventional part number.
;
;;
3
4
1
2 3
4
Pin connection
Applications
2.5 min.
(15.5)
typ
1.2
50
max
1.5
10
0.2
Unit
V
碌A(chǔ)
pF
碌A(chǔ)
pF
碌A(chǔ)
碌s
5
500
6
0.3
V
1

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