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ON2153 Datasheet

  • ON2153

  • Reflective Photosensor

  • 3頁(yè)

  • PANASONIC

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Reflective Photosensors (Photo Reflectors)
CNZ2153
(ON2153)
Reflective photosensor
Non-contact point SW, object sensing
CNZ2153 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a Si phototransistor is used as the
light detecting element. The two elements are located parallel in the
same direction and objects are detected when passing in front of the
device.
(3.2)
4.0
鹵0.2
3.0
鹵0.2
Unit: mm
Mark for indicating
LED side
7.5
鹵0.2
鈻?/div>
Overview
10.6
鹵0.3
0.5
9.6
鹵0.3
6.0
鹵0.2
蠁2.2
鹵0.2
10.2 min.
1.7
鹵0.2
鈻?/div>
Features
鈥?/div>
Fast response
鈥?/div>
Small size and light weight
鈥?/div>
Detection of paper, film and cloth
鈥?/div>
Optical mark reading
鈥?/div>
Detection of coin and bill
鈥?/div>
Detection of position and edge
鈥?/div>
Start, end mark detection of magnetic tape
(Note)
蠁0.45
鹵0.05
(7.2)
蠁0.3
鹵0.05
*2-0.9
鹵0.15
3
2
鈻?/div>
Applications
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation
*1
Output (Photo Collector-emitter voltage
transistor)
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
*2
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
P
D
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Rating
3
50
75
30
5
20
50
鈭?5
to
+85
鈭?0
to
+100
Unit
V
mA
mW
V
V
mA
mW
擄C
擄C
1: Cathode
2: Anode
1
4
3: Emitter
4: Collector
PRSTR104-002 Package
1. ( ) Dimension is reference
2. * is dimension at the root of leads
Note) *1: Input power derating ratio is
1.0 mW/擄C at T
a
鈮?/div>
25擄C.
*2: Output power derating ratio is
0.67 mW/擄C at T
a
鈮?/div>
25擄C.
Temperature
鈻?/div>
Electrical-Optical Characteristics
T
a
=
25擄C
鹵
3擄C
Input
Parameter
Forward voltage
Terminal capacitance
Output
Collector-emitter cutoff current
characteristics (Base open)
Symbol
V
F
I
F
=
50 mA
I
R
C
t
I
CEO
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
V
CE
=
10 V
V
CC
=
5 V, I
F
=
20 mA, R
L
=
100
鈩?/div>
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
0.1 mA, R
L
=
100
鈩?/div>
V
CC
d
=
3 mm
R
L
White paper
(Reflective ratio 90%)
Conditions
Min
Typ
1.2
50
Max
1.5
10
0.2
Unit
V
碌A(chǔ)
pF
碌A(chǔ)
碌A(chǔ)
V
碌s
碌s
characteristics Reverse current
Transfer
Collector current
*1, 2
I
C
characteristics Collector-emitter saturation voltage V
CE(sat)
Rise time
Fall time
t
r
t
f
100
6.0
6.0
1200
0.5
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: Output current measurement circuit
(Ambient light is shut off completely)
*2: Rank classification
Rank
I
C
(碌A(chǔ))
Q
100 to 300
R
S
I
F
I
C
No-rank
200 to 600 400 to 1 200 100 to 1 200
SHG00053BED
Note) The part number in the parenthesis
shows conventional part number.
Publication date: April 2004
1

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