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Isolated Hermetic Metal Package
High Input Impedance
Low On-Voltage
High Current Capability
Fast Turn-Off
Low Conductive Losses
Available Screened To MIL-S-19500, TX, TXV And S Levels
Free Wheeling Diode
Ceramic Feedthroughs Available
DESCRIPTION
This power module includes an IGBT power transistor which features a high
impedance insulated gate and the low on-resistance characteristics of bipolar
transistor with a free wheeling diode connected across the emitter and collector.
These devices are ideally suited for motor drives, UPS converters, power supplies
and resonant power converters.
MAXIMUM RATINGS
@ 25擄C Unless Specified Otherwise
PART
NUMBER
OM6508SA
OM6509SA
I
C
(Cont.)
@ 90擄C, A
5
10
V
(BR)CES
V
500
500
V
CE (sat)
(Typ.)
V
2.8
2.8
T
f
(Typ.)
ns
400
400
q
JC
擄C/W
3.8
3.0
P
D
W
35
42
T
J
擄C
150
150
3.1
SCHEMATIC
Collector
MECHANICAL OUTLINE
.144 DIA.
.545
.535
.050
.040
.685
.665
.800
.790
.550
.530
1
C
2
E
3
G
Gate
PIN CONNECTION
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
Emitter
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter 鈥淐鈥?to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 147
1
2
