鈥?/div>
Isolated Hermetic Metal Package
High Input Impedance
Low On-Voltage
High Current Capability
Fast Turn-Off
Available Screened To MIL-S-19500, TX, TXV And S Levels
Low Conductive Losses
Ceramic Feedthroughs Available
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS
@ 25擄C Unless Specified Otherwise
PART
NUMBER
OM6505SA
OM6506SA
I
C
(Cont.)
@ 90擄C, A
15
20
V
(BR)CES
V
500
500
V
CE (sat)
(Typ.)
V
2.8
2.8
T
f
(Typ.)
ns
400
400
q
JC
擄C/W
1.75
1.00
P
D
W
72
125
T
J
擄C
150
150
3.1
SCHEMATIC
Collector
MECHANICAL OUTLINE
.144 DIA.
.545
.535
.050
.040
.685
.665
.800
.790
.550
.530
1
C
2
E
3
G
Gate
PIN CONNECTION
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
Emitter
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter 鈥淐鈥?to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 143
1
2
