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Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. The device breakdown ratings provide a substantial
voltage margin for stringent applications such as 270 VDC aircraft power and/or
rectified 230 VAC power (line operation). They are ideally suited for Military
requirements where small size, high performance and high reliability are required,
and in applications such as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM11N60
OM11N55
V
DS
600V
550V
R
DS(on)
.50
.44
I
D(MAX)
11A
11A
3.1
SCHEMATIC
DRAIN
GATE
SOURCE
4 11 R1
Supersedes 2 04 R0
3.1 - 19