HIGH-POWER GaAlAs IR EMITTERS
1.00
MIN.
GLASS
DOME
OD-880F
FEATURES
ANODE
(CASE)
.209
.212
鈥?High reliability liquid-phase epitaxially grown GaAlAs
鈥?880nm peak emission for optimum matching with
ODD-45W photodiode
鈥?Wide range of linear power output
鈥?Hermetically sealed TO-46 package
.041
.015
.183
.186
.152
.154
.100
鈥?Narrow angle for long distance applications
鈥?OD-880F1 selected to meet minimum radiant intensity
.017
.030
.040
CATHODE
.197
.205
.036
45擄
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
ELECTRO-OPTICAL CHARACTERISTICS AT 25擄C
PARAMETERS
Total Power Output, P
o
Radiant Intensity, I
e
OD-880F
OD-880F1
OD-880F
OD-880F1
TEST CONDITIONS
I
F
= 100mA
120
I
F
= 50mA
I
F
= 100mA
I
R
= 10碌A
V
R
= 0V
5
MIN
15
TYP
17
8
135
160
880
80
8
1.55
30
17
0.5
0.5
1.9
MAX
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
碌sec
碌sec
Peak Emission Wavelength,
位
P
Spectral Bandwidth at 50%,
鈭單?/div>
Half Intensity Beam Angle,
胃
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Fall Time
ABSOLUTE MAXIMUM RATINGS AT 25擄C CASE
Power Dissipation
1
Continuous Forward Current
Peak Forward Current (10碌s, 400Hz)
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25擄C
2Derate linearly above 25擄C
190mW
100mA
3A
5V
240擄C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
Thermal Resistance, R
THJA2
-55擄C to 100擄C
100擄C
350擄C/W Typical
115擄C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25擄C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
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