鈥?/div>
BASED ON TELCORDIA RELIABILITY
DESCRIPTION
NEC's NX6504 Series is a 1550 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD. This device is ideal for Synchro-
nous Digital Hierarchy (SDH) system, STM-1/OC-3, STM-4/
OC-12 and ITU-T recommendations.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= 25擄C, unless otherwise specified)
PART NUMBER
SYMBOLS
V
OP
I
TH
P
TH
PARAMETERS AND CONDITIONS
Operating Voltage, P
O
= 5.0 mW, T
C
= -10 to +85擄C
Threshold Current
T
C
= 85擄C
Threshold Output Power, T
C
= -10 to +85擄C, I
F
= I
TH
Differential Efficiency
Temperature Dependence
鈭?/div>
畏
d
= 10 log
of Differential Efficiency
UNITS
V
mA
mA
碌W
W/A
dB
MIN
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.15
-3.0
NX6504 Series
TYP
1.0
12
35
鈥?/div>
0.25
-1.5
MAX
1.5
25
50
200
鈥?/div>
鈥?/div>
畏
d
鈭單?/div>
d
位p
SMSR
胃
鈯?/div>
胃
||
t
r
t
f
I
m
I
D
C
t
緯
畏
d
(@ 85擄C)
畏
d
(@ 25擄C)
Peak Emission Wavelength,
P
O
= 5.0 mW, RMS (-20 dB), T
C
= -10 to +85擄C
Side mode Suppression Ratio
P
O
= 5.0 mW, T
C
= -10 to +85擄C
Vertical Beam Angle
1
,(Refer to
Definitions)
P
O
= 5.0 mW, FAHM
2
Lateral Beam Angle
1
, P
O
= 5.0 mW, FAHM
2
Rise Time, 10 to 90%
Fall Time, 10 to 90%
Monitor Current, P
O
= 5.0 mW, V
R
= 5 V
Monitor Dark Current,
V
R
= 5 V
V
R
= 5 V, T
C
= -10 to +85擄C
nm
dB
deg
deg
ns
ns
碌A(chǔ)
nA
nA
pF
dB
1530
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
200
鈥?/div>
鈥?/div>
鈥?/div>
-1.0
鈥?/div>
45
30
25
0.05
0.2
600
0.1
鈥?/div>
6
鈥?/div>
1570
40
35
0.5
0.5
1000
10
500
20
1.0
Monitor PD Terminal Capacitance, V
R
= 5 V, f = 1 MHz
Tracking Error
3
Im = const, (@ P
O
= 5.0 mW, T
C
= 25擄C)
T
C
= -10 to +85擄C
Notes:
1. Applicable only to NX6504S Series.
2. FAHM: Full Angle at Half Maximum.
P
O
3. Tracking Error:
緯
(mW)
T
C
= 25擄C
5.0
T
C
= -10 to +85擄C
P
O
緯
=
10 log
|
P
O
5.0
|
[dB]
0
I
m
I
m
(mA)
California Eastern Laboratories
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NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR ...
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