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NUP2301MW6T1D Datasheet

  • NUP2301MW6T1D

  • Low Capacitance Diode Array for ESD Protection in Two Data L...

  • 4頁

  • ONSEMI

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NUP2301MW6T1
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
NUP2301MW6T1 is a MicroIntegration錚?device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
http://onsemi.com
PIN CONFIGURATION
AND SCHEMATIC
V
N
I/O
1
2
6
5
N/C
I/O
鈥?/div>
Low Capacitance (2.0 pf Maximum Between I/O Lines)
鈥?/div>
Single Package Integration Design
鈥?/div>
Provides ESD Protection for JEDEC Standards JESD22
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000鈭?鈭? (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Pb鈭扚ree Package is Available
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
V
P
3
4
N/C
6
54
12
3
MARKING DIAGRAM
Applications
SC鈭?8
CASE 419B
STYLE 23
68
d
68 = Specific Device Code
d
= Date Code
ORDERING INFORMATION
Device
NUP2301MW6T1
NUP2301MW6T1G
Package
SC鈭?8
Shipping
鈥?/div>
3000/Tape & Reel
MAXIMUM RATINGS
(Each Diode) (T
J
= 25擄C unless otherwise noted)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward
Current (Note 1)
(Averaged over any 20 ms Period)
Repetitive Peak Forward Current
Non鈭扲epetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 S
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
Value
70
200
500
70
715
Unit
Vdc
mAdc
mAdc
V
mA
SC鈭?8
3000/Tape & Reel
(Pb鈭扚ree)
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
I
FRM
I
FSM
450
2.0
1.0
0.5
mA
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR鈭? = 1.0

0.75

0.062 in.
錚?/div>
Semiconductor Components Industries, LLC, 2005
January, 2005
鈭?/div>
Rev. 2
1
Publication Order Number:
NUP2301MW6T1/D

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