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NTTS2P02R2G Datasheet

  • NTTS2P02R2G

  • Power MOSFET -2.4 Amps, -20 Volts

  • 6頁(yè)

  • ONSEMI

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NTTS2P02R2
Power MOSFET
鈭?.4 Amps, 鈭?0 Volts
Single P鈭扖hannel Micro8t
Features
http://onsemi.com
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Micro鈭? Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Pb鈭扚ree Package is Available
鈭?.4
AMPERES
鈭?0
VOLTS
R
DS(on)
= 90 mW
Single P鈭扖hannel
D
Applications
鈥?/div>
Power Management in Portable and Battery鈭扨owered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
G
S
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
鈭?/div>
Continuous
Thermal Resistance
鈭?/div>
Junction鈭抰o鈭扐mbient (Note 1)
Total Power Dissipation @ T
A
= 25擄C
Continuous Drain Current @ T
A
= 25擄C
Continuous Drain Current @ T
A
= 70擄C
Pulsed Drain Current (Note 3)
Thermal Resistance
鈭?/div>
Junction鈭抰o鈭扐mbient (Note 2)
Total Power Dissipation @ T
A
= 25擄C
Continuous Drain Current @ T
A
= 25擄C
Continuous Drain Current @ T
A
= 70擄C
Pulsed Drain Current (Note 3)
Operating and Storage
Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy
鈭?/div>
Starting T
J
= 25擄C
(V
DD
=
鈭?0
Vdc, V
GS
=
鈭?.5
Vdc,
Peak I
L
=
鈭?.0
Apk, L = 28 mH,
R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
Symbol
V
DSS
V
GS
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
T
J
, T
stg
EAS
Value
鈭?0
鹵8.0
160
0.78
鈭?.4
鈭?.92
鈭?0
88
1.42
鈭?.25
鈭?.6
鈭?0
鈭?5
to
+150
350
Unit
V
V
擄C/W
W
A
A
A
擄C/W
W
A
A
A
擄C
mJ
MARKING DIAGRAM &
PIN ASSIGNMENT
D D D D
8
WW
ADG
G
1
S S S G
AD
WW
G
= Specific Device Code
= Work Week
= Pb鈭扚ree Package
8
1
Micro8
CASE 846A
STYLE 1
(Note: Microdot may be in either location)
ORDERING INFORMATION
T
L
260
擄C
Device
NTTS2P02R2
NTTS2P02R2G
Package
Micro8
Micro8
(Pb鈭扚ree)
Shipping
鈥?/div>
4000/Tape & Reel
4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR鈭? or G鈭?0 PCB, Steady State.
2. Mounted onto a 2鈥?square FR鈭? Board
(1 IN SQ, 2 oz Cu 0.06鈥?thick single sided), Steady State.
3. Pulse Test: Pulse Width
鈮?/div>
300
ms,
Duty Cycle
鈮?/div>
2%.
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2006
March, 2006
鈭?/div>
Rev. 5
1
Publication Order Number:
NTTS2P02R2/D

NTTS2P02R2G 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • P-Channel

  • - 20 V

  • +/- 8 V

  • - 2.4 A

  • 0.09 Ohms

  • Single Quad Drain Triple Source

  • + 150 C

  • SMD/SMT

  • Micro-8

  • Reel

  • 40 ns, 31 ns

  • - 55 C

  • 0.78 W

  • 40 ns, 31 ns

  • 4000

  • 35 ns, 33 ns

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