鈥?/div>
Low Gate Charge for Fast Switching
Small Footprint 鈭?30% Smaller than TSOP鈭?
ESD Protected Gate
Pb鈭扚ree Package for Green Manufacturing (G Suffix)
http://onsemi.com
V
(BR)DSS
30 V
1.5
W
@ 2.5 V
R
DS(on)
TYP
1.0
W
@ 4.0 V
270 mA
I
D
Max
Applications
Low Side Load Switch
Li鈭捍on Battery Supplied Devices 鈭?Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
SC鈭?0
SOT鈭?23 (3 LEADS)
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise stated)
Parameter
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
A
= 25
擄C
T
A
= 85
擄C
T
A
= 25
擄C
t =10
碌s
P
D
I
DM
T
J
, T
STG
I
S
T
L
Symbol
V
DSS
V
GS
I
D
Value
30
鹵20
270
200
330
200
鈭?5 to
150
270
260
mW
Units
V
V
mA
Gate
1
3
Drain
Source
2
Top View
mA
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8鈥?from case for 10 s)
擄
C
mA
擄C
1
2
3
MARKING DIAGRAM
TDW
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
SC鈭?0 / SOT鈭?23
CASE 419
STYLE 8
TD
W
= Device Code
= Work Week
PIN ASSIGNMENT
Gate
1
3
Source
2
Top View
Drain
ORDERING INFORMATION
Device
NTS4001NT1
NTS4001NT1G
Package
SC鈭?0
SC鈭?0
(Pb鈭扚ree)
Shipping
3000 Units/Reel
3000 Units/Reel
漏
Semiconductor Components Industries, LLC, 2003
1
September, 2003 鈭?Rev. 1
Publication Order Number:
NTS4001N/D