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NTR4101PT1G Datasheet

  • NTR4101PT1G

  • Trench Power MOSFET −20 V, Single P−Channel, SOT...

  • 60.30KB

  • 6頁(yè)

  • ONSEMI

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NTR4101P
Trench Power MOSFET
鈭?0 V, Single P鈭扖hannel, SOT鈭?3
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Leading 鈭?0 V Trench for Low R
DS(on)
鈭?.8 V Rated for Low Voltage Gate Drive
SOT鈭?3 Surface Mount for Small Footprint
Pb鈭扚ree Package is Available
V
(BR)DSS
鈭?0 V
http://onsemi.com
Applications
鈥?/div>
Load/Power Management for Portables
鈥?/div>
Load/Power Management for Computing
鈥?/div>
Charging Circuits and Battery Protection
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Parameter
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
鈮?/div>
10 s
Power Dissipation
(Note 1)
Steady
State
t
鈮?/div>
10 s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
ESD Capability (Note 3)
Steady
State
T
A
= 25擄C
T
A
= 85擄C
T
A
= 25擄C
tp = 10
ms
C = 100 pF,
RS = 1500
W
P
D
I
DM
ESD
T
J
,
T
STG
I
S
T
L
I
D
T
A
= 25擄C
T
A
= 85擄C
T
A
= 25擄C
T
A
= 25擄C
P
D
Symbol
V
DSS
V
GS
I
D
Value
鈭?0
鹵8.0
鈭?.4
鈭?.7
鈭?.2
0.73
1.25
鈭?.8
鈭?.3
0.42
鈭?.5
225
鈭?5 to
150
鈭?.4
260
W
A
V
擄C
A
擄C
A
W
Unit
V
V
A
R
DS(ON)
TYP
70 mW @ 鈭?.5 V
90 mW @ 鈭?.5 V
112 mW @ 鈭?.8 V
I
D
MAX
鈭?.2 A
P鈭扖hannel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
3
3
Drain
TR4
W
1
Gate
TR4
W
= Device Code
= Work Week
2
Source
1
2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8鈥?from case for 10 s)
SOT鈭?3
CASE 318
STYLE 21
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
Device
NTR4101PT1
NTR4101PT1G
Package
SOT鈭?3
SOT鈭?3
Pb鈭扚ree
Shipping
鈥?/div>
3000/Tape & Reel
3000/Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter
Junction鈭抰o鈭扐mbient 鈭?Steady State (Note 1)
Junction鈭抰o鈭扐mbient 鈭?t < 10 s (Note 1)
Junction鈭抰o鈭扐mbient 鈭?Steady State (Note 2)
Symbol
R
qJA
R
qJA
R
qJA
Max
170
100
300
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Unit
擄C/W
1. Surface鈭抦ounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface鈭抦ounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
漏
Semiconductor Components Industries, LLC, 2004
1
October, 2004 鈭?Rev. 3
Publication Order Number:
NTR4101P/D

NTR4101PT1G 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門

  • 20V

  • 1.8A

  • 85 毫歐 @ 1.6A，4.5V

  • 1.2V @ 250µA

  • 8.5nC @ 4.5V

  • 675pF @ 10V

  • 420mW

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23-3（TO-236）

  • 帶卷 (TR)

  • NTR4101PT1GOSTR

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