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NTR1P02LT1G Datasheet

  • NTR1P02LT1G

  • Power MOSFET

  • 6頁

  • ONSEMI

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NTR1P02LT1
Power MOSFET
鈭?0 V, 鈭?.3 A, P鈭扖hannel
SOT鈭?3 Package
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc鈭抎c converters and power management in portable
and battery鈭抪owered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
http://onsemi.com
V
(BR)DSS
鈭?0 V
R
DS(on)
MAX
220 mW
I
D
MAX
鈭?.3 A
鈥?/div>
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
鈥?/div>
Miniature SOT鈭?3 Surface Mount Package Saves Board Space
鈥?/div>
Pb鈭扚ree Package is Available
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage 鈭?Continuous
Drain Current
鈭?Continuous @ T
A
= 25擄C
鈭?Pulsed Drain Current (t
p
鈮?/div>
10
ms)
Total Power Dissipation @ T
A
= 25擄C
Operating and Storage Temperature Range
Thermal Resistance 鈭?Junction鈭抰o鈭扐mbient
Maximum Lead Temperature for Soldering
Purposes, (1/8鈥?from case for 10 s)
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJA
T
L
Value
鈭?0
鹵12
鈭?.3
鈭?.0
400
鈭?55 to
150
300
260
Unit
V
V
A
A
mW
擄C
擄C/W
擄C
1
2
SOT鈭?3
CASE 318
STYLE 21
3
G
P鈭扖hannel
D
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
PO2W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1
Gate
2
Source
PO2 = Specific Device Code
W
= Work Week
ORDERING INFORMATION
Device
NTR1P02LT1
NTR1P02LT1G
NTR1P02LT3
NTR1P02LT3G
Package
SOT鈭?3
SOT鈭?3
(Pb鈭扚ree)
SOT鈭?3
SOT鈭?3
(Pb鈭扚ree)
Shipping
鈥?/div>
3000 Tape & Reel
3000 Tape & Reel
10,000 Tape & Reel
10,000 Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
July, 2004 鈭?Rev. 5
Publication Order Number:
NTR1P02LT1/D

NTR1P02LT1G 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門

  • 20V

  • 1.3A

  • 220 毫歐 @ 750mA，4.5V

  • 1.25V @ 250µA

  • 5.5nC @ 4V

  • 225pF @ 5V

  • 400mW

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23-3（TO-236）

  • 帶卷 (TR)

  • NTR1P02LT1GOSTR

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