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NTQS6463 Datasheet

  • NTQS6463

  • Power MOSFET

  • 6頁

  • ONSEMI

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NTQS6463
Power MOSFET
鈭?0 V, 鈭?.8 A, P鈭扖hannel TSSOP鈭?
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
New Low Profile TSSOP鈭? Package
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
http://onsemi.com
V
DSS
鈭?0 V
R
DS(on)
TYP
20 mW @ 鈭?0 V
I
D
MAX
鈭?.8 A
Applications
鈥?/div>
Power Management in Portable and Battery鈭扨owered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
鈥?/div>
Lithium Ion Battery Applications
鈥?/div>
Note Book PC
G
P鈭扖hannel
D
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
Drain Current (Note 1)
鈭?Continuous @ T
A
= 25擄C
鈭?Continuous @ T
A
= 70擄C
鈭?Pulsed (Note 3)
Total Power Dissipation (Note 1)
@ T
A
= 25擄C
Drain Current (Note 2)
鈭?Continuous @ T
A
= 25擄C
鈭?Continuous @ T
A
= 70擄C
鈭?Pulsed (Note 3)
Total Power Dissipation (Note 2)
@ T
A
= 25擄C
Operating and Storage
Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 40 V, I
L
= 18.4 A,
L = 5.0 mH, R
G
= 25
W)
Thermal Resistance 鈭?/div>
Junction鈭抰o鈭扐mbient (Note 1)
Junction鈭抰o鈭扐mbient (Note 2)
Symbol
V
DSS
V
GS
I
D
I
D
I
DM
P
D
Value
鈭?0
"12
鈭?.5
鈭?.4
"30
0.93
W
1
A
I
D
I
D
I
DM
P
D
T
J
, T
stg
E
AS
鈭?.8
鈭?.4
"30
1.39
鈭?5 to
+150
845
W
擄C
mJ
D
S
S
G
463
Y
WW
N
= Device Code
= Year
= Work Week
= MOSFET
Unit
V
V
A
8
TSSOP鈭?
CASE 948S
PLASTIC
S
MARKING
DIAGRAM
463
YWW
N
PIN ASSIGNMENT
1
2
3
4
Top View
8
7
6
5
D
S
S
D
R
qJA
134
90
擄C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum 3鈥?X 3鈥?FR鈭? board, steady state.
2. Mounted on 1鈥?square (1 oz.) board, steady state.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
ORDERING INFORMATION
Device
NTQS6463
NTQS6463R2
Package
TSSOP鈭?
TSSOP鈭?
Shipping
鈥?/div>
100 Units/Rail
3000/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
September, 2004 鈭?Rev. 2
Publication Order Number:
NTQS6463/D

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