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NTMS4404NR2 Datasheet

  • NTMS4404NR2

  • Power MOSFET

  • 6頁(yè)

  • ONSEMI

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NTMS4404N
Power MOSFET
30 V, 12 A, Single N鈭扖hannel, SO鈭?
Features
鈥?/div>
High Density Power MOSFET with Ultra Low R
DS(on)
for Higher
Efficiency
鈥?/div>
Miniature SO鈭? Surface Mount Package Saving Board Space
鈥?/div>
I
DSS
Specified at Elevated Temperature
鈥?/div>
Diode Exhibits High Speed, Soft Recovery
Applications
http://onsemi.com
V
(BR)DSS
30 V
R
DS(on)
TYP
9.7 mW @ 10 V
15.5 mW @ 4.5 V
I
D
MAX
12 A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Management for Battery Power Products
Portable Products
Computers, Printers, PCMCIA Cards
Cell Phones, Cordless Telephones
N鈭扖hannel
D
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise stated)
Parameter
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
Continuous Drain
Current (Note 1)
Steady
State
tp
v10
s
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
T
A
= 25擄C
T
A
= 70擄C
T
A
= 25擄C
P
D
I
D
P
D
I
DM
T
J
,
T
STG
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
30
$20
9.6
7.6
12
1.56
2.5
7.0
5.6
0.83
50
鈭?5 to
150
6.0
500
W
A
擄C
A
mJ
A
1
Unit
V
V
A
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
W
Source
Source
Source
Gate
1
E4404N
LYWW
8
Drain
Drain
Drain
Drain
Steady State
tp
v10
s
Steady
State
T
A
= 25擄C
T
A
= 70擄C
T
A
= 25擄C
tp = 10
ms,
DC = 2 %
SO鈭?
CASE 751
STYLE 12
Top View
E4404N = Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy (V
DD
= 20 V, V
GS
= 5 V, I
PK
= 7.25 A,
L = 19 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8鈥?from case for 10 s)
ORDERING INFORMATION
Device
Package
SO鈭?
Shipping
鈥?/div>
2500/Tape & Reel
T
L
260
擄C
NTMS4404NR2
THERMAL RESISTANCE RATINGS
Parameter
Junction鈭抰o鈭扐mbient 鈥?Steady State (Note 1)
Junction鈭抰o鈭扐mbient 鈥?t = 1 0 s (Note 1)
Junction鈭抰o鈭扐mbient 鈥?Steady State (Note 2)
Symbol
R
qJA
R
qJA
R
qJA
Max
80
50
150
Unit
擄C/W
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface鈭抦ounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface鈭抦ounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)
漏
Semiconductor Components Industries, LLC, 2003
1
November, 2003 鈭?Rev. 1
Publication Order Number:
NTMS4404N/D

NTMS4404NR2 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 7A

  • 11.5 毫歐 @ 12A，10V

  • 3V @ 250µA

  • 70nC @ 10V

  • 2500pF @ 24V

  • 830mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • NTMS4404NR2OSNTMS4404NR2OS-NDNTMS4404NR2OSTR

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