NTMD3N08, NTMD3N08L
Product Preview
80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on鈥搑esistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
alternator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor鈥檚 latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
ELECTRICAL CHARACTERISTICS
(TJ = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain鈥搕o鈥揝ource Breakdown
Voltage
(VGS = 0 Vdc, ID = 250
碌A(chǔ)dc)
Zero Gate Voltage Drain Current
(VDS = 80 Vdc, VGS = 0 Vdc)
(VDS = 80 Vdc, VGS = 0 Vdc,
TJ =150擄C)
Gate鈥揃ody Leakage Current
(VGS =
鹵20
Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250
碌A(chǔ)dc)
NTMD3N08
NTMD3N08L
Static Drain鈥搕o鈥揝ource
On鈥揜esistance
(ID = 1.5 Adc)
NTMD3N08, VGS= 10 V
NTMD3N08L, VGS = 5 V
VGS(th)
2.0
1.0
RDS(on)
3.0
2.0
4.0
3.0
m鈩?/div>
Vdc
DUAL SO鈥?
CASE 751
STYLE 11
V(BR)DSS
80
IDSS
鈥?/div>
鈥?/div>
IGSS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
10
nAdc
鹵100
鈥?/div>
鈥?/div>
碌A(chǔ)dc
Vdc
Symbol
Min
Typ
Max
Unit
http://onsemi.com
3 AMPERES
3N08 Typ RDS(on) = 185 m鈩?/div>
3N08L Typ RDS(on) = 200 m鈩?/div>
鈥?/div>
鈥?/div>
185
200
鈥?/div>
鈥?/div>
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
漏
Semiconductor Components Industries, LLC, 2000
1
October, 2000 鈥?Rev. 0
Publication Order Number:
NTMD3N08/D
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