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NTHD4P02FT1G Datasheet

  • NTHD4P02FT1G

  • Power MOSFET and Schottky Diode

  • 8頁(yè)

  • ONSEMI

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NTHD4P02F
Power MOSFET and
Schottky Diode
鈭?0 V, 鈭?.0 A, Single P鈭扖hannel with
3.0 A Schottky Barrier Diode, ChipFETt
Features
http://onsemi.com
MOSFET
V
(BR)DSS
鈭?0 V
R
DS(on)
TYP
鈭?30 mW @ 鈭?.5 V
200 mW @ 鈭?.5 V
I
D
MAX
鈭?.0 A
鈥?/div>
Leadless SMD Package Featuring a MOSFET and Schottky Diode
鈥?/div>
40% Smaller than TSOP鈭? Package with Similar Thermal
Characteristics
鈥?/div>
Independent Pinout to each Device to Ease Circuit Design
鈥?/div>
Ultra Low V
F
Schottky
鈥?/div>
Pb鈭扚ree Package is Available
Applications
SCHOTTKY DIODE
V
R
MAX
20 V
V
F
TYP
0.510 V
A
I
F
MAX
3.0 A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Li鈭捍on Battery Charging
High Side DC鈭扗C Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered Products
Parameter
Symbol
V
DSS
V
GS
T
J
= 25擄C
T
J
= 85擄C
T
J
= 25擄C
I
D
I
DM
P
D
I
D
Value
鈭?0
鹵12
鈭?.2
鈭?.6
鈭?.0
鈭?.0
1.1
0.6
2.1
I
S
T
J
, T
STG
T
L
鈭?.1
鈭?5 to 150
260
A
擄C
擄C
A
A
W
Units
V
V
A
S
MOSFET MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
Continuous Drain
Current
Steady
State
t
v
5s
Pulsed Drain
Current
Power Dissipation
G
D
P鈭扖hannel MOSFET
C
SCHOTTKY DIODE
ChipFET
CASE 1206A
STYLE 3
t
p
= 10
ms
Steady
State
t
v
5s
T
J
= 25擄C
T
J
= 85擄C
T
J
= 25擄C
PIN
CONNECTIONS
1
8
MARKING
DIAGRAM
1
2
3
4
C3
M
8
7
6
5
Continuous Source Current (Body Diode)
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
(1/8鈥?from case for 10 s)
A
2
7
C
C
6
A
S
3
D
D
4
5
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Forward Current
Steady
State
t
v
5s
Symbol
V
RRM
V
R
I
F
25 C
T
J
= 25擄C
3.0
A
Value
20
20
2.2
Unit
V
V
A
G
C2 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
NTHD4P02FT1
NTHD4P02FT1G
Package
ChipFET
ChipFET
(Pb鈭抐ree)
Shipping
鈥?/div>
3000/Tape & Reel
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
漏
Semiconductor Components Industries, LLC, 2004
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4P02F/D
1
October, 2004 鈭?Rev. 4

NTHD4P02FT1G 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 二極管（隔離式）

  • 20V

  • 2.2A

  • 155 毫歐 @ 2.2A，4.5V

  • 1.2V @ 250µA

  • 6nC @ 4.5V

  • 300pF @ 10V

  • 1.1W

  • 表面貼裝

  • 8-SMD，扁平引線

  • ChipFET?

  • 帶卷 (TR)

  • NTHD4P02FT1G-NDNTHD4P02FT1GOSTR

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