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NTHD4N02FT1G Datasheet

  • NTHD4N02FT1G

  • Power MOSFET and Schottky Diode

  • 6頁

  • ONSEMI

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NTHD4N02F
Power MOSFET and
Schottky Diode
20 V, 3.9 A, N鈭扖hannel, with 3.7 A
Schottky Barrier Diode, ChipFETt
Features
http://onsemi.com
MOSFET
V
(BR)DSS
20 V
R
DS(on)
TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
I
D
MAX
3.9 A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP鈭? Package with Better Thermals
Super Low Gate Charge MOSFET
Ultra Low V
F
Schottky
Pb鈭扚ree Package is Available
Applications
鈥?/div>
Fast Switching, low Gate Charge for Dc to Dc Buck and Boost
Converters
鈥?/div>
Li鈭捍on Battery Applications in Cell Phones, PDAs, DSCs, and Media
Players
鈥?/div>
Load Side Switching
MOSFET MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Parameter
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
Continuous Drain
Current
Steady
State
t
v
5s
Pulsed Drain Current
Power Dissipation
T
J
= 25擄C
T
J
= 85擄C
T
J
= 25擄C
I
DM
P
D
Symbol
V
DSS
V
GS
I
D
Value
20
鹵12
2.9
2.1
3.9
12
0.91
0.36
2.1
I
S
T
J
, T
STG
T
L
2.6
鈭?5 to 150
260
A
擄C
擄C
A
W
Unit
V
V
A
SCHOTTKY DIODE
V
R
MAX
20 V
D1
V
F
TYP
0.35 V
A
I
F
MAX
3.7 A
G1
S1
N鈭扖hannel MOSFET
C
SCHOTTKY DIODE
ChipFET]
CASE 1206A
STYLE 3
t
p
=10
ms
Steady
State
t
v
5s
T
J
= 25擄C
T
J
= 85擄C
T
J
= 25擄C
PIN
CONNECTIONS
A
A
S
G
1
2
8
7
6
C
C
D
5
D
1
2
3
4
MARKING
DIAGRAM
Continuous Source Current (Body Diode)
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
(1/8鈥?from case for 10 s)
C2
M
3
4
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Forward Current
Steady
State
t
v
5s
Symbol
V
RRM
V
R
I
F
25 C
T
J
= 25擄C
3.7
A
Value
20
20
2.2
Unit
V
V
A
C2 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
NTHD4N02FT1
NTHD4N02FT1G
Package
ChipFET
ChipFET
(Pb鈭扚ree)
Shipping
鈥?/div>
3000/Tape & Reel
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4N02F/D
漏
Semiconductor Components Industries, LLC, 2004
1
October, 2004 鈭?Rev. 7

NTHD4N02FT1G 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 二極管（隔離式）

  • 20V

  • 2.9A

  • 80 毫歐 @ 2.9A，4.5V

  • 1.2V @ 250µA

  • 4nC @ 4.5V

  • 300pF @ 10V

  • 910mW

  • 表面貼裝

  • 8-SMD，扁平引線

  • ChipFET?

  • 帶卷 (TR)

  • NTHD4N02FT1GOS

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