NTF6P02T3G Datasheet

IC型號：
NTF6P02T3G
PDF描述：
Power MOSFET -6.0 Amps, -20 Volts
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6頁
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NTF6P02T3

Power MOSFET

鈭?.0 Amps, 鈭?0 Volts

P鈭扖hannel SOT鈭?23

Features

http://onsemi.com

鈥?/div>

Low R

DS(on)

Logic Level Gate Drive

Diode Exhibits High Speed, Soft Recovery

Avalanche Energy Specified

Pb鈭扚ree Package is Available

鈭?.0

AMPERES

鈭?0

VOLTS

DS(on)

= 44 mW

(Typ.)

P鈭扖hannel

Typical Applications

鈥?/div>

Power Management in Portables and Battery鈭扨owered Products,

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS

= 25擄C unless otherwise noted)

Rating

Drain鈭抰o鈭扴ource Voltage

Gate鈭抰o鈭扴ource Voltage

Drain Current (Note 1)

鈭?/div>

Continuous @ T

= 25擄C

鈭?/div>

Continuous @ T

= 70擄C

鈭?/div>

Single Pulse (t

= 10

ms)

Total Power Dissipation @ T

= 25擄C

Operating and Storage Temperature Range

Symbol

DSS

Value

鈭?0

鹵8.0

鈭?0

鈭?.4

鈭?5

8.3

鈭?5

+150

150

Unit

Vdc

Adc

Apk

擄C

MARKING

DIAGRAM

& PIN

ASSIGNMENT

Drain

, T

stg

SOT鈭?23

CASE 318E

STYLE 3

Gate

AWW

6P02

Drain Source

Single Pulse Drain鈭抰o鈭扴ource Avalanche

Energy

鈭?/div>

Starting T

= 25擄C

鈭?0

Vdc, V

鈭?.0

Vdc,

L(pk)

鈭?0

A, L = 3.0 mH, R

= 25W)

Thermal Resistance

鈭?/div>

Junction to Lead (Note 1)

鈭?/div>

Junction to Ambient (Note 2)

鈭?/div>

Junction to Ambient (Note 3)

Maximum Lead Temperature for Soldering

Purposes, 1/8鈥?from case for 10 seconds

qJL

qJA

71.4

160

260

擄C/W

= Assembly Location

= Work Week

6P02

= Specific Device Code

= Pb鈭扚ree Package

(Note: Microdot may be in either location)

擄C

ORDERING INFORMATION

Device

NTF6P02T3

NTF6P02T3G

Package

SOT鈭?23

Shipping

鈥?/div>

4000/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Steady State.

2. When surface mounted to an FR4 board using 1鈥?pad size,

(Cu. Area 1.127 sq in), Steady State.

3. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu. Area 0.412 sq in), Steady State.

SOT鈭?23 4000/Tape & Reel

(Pb鈭扚ree)

鈥燜or information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

漏

Semiconductor Components Industries, LLC, 2006

March, 2006

鈭?/div>

Rev. 1

Publication Order Number:

NTF6P02T3/D

標準包裝
4,000
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
10A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
50 毫歐 @ 6A，4.5V
Id 時的 Vgs(th)（最大）
1V @ 250µA
閘電荷(Qg) @ Vgs
20nC @ 4.5V
輸入電容 (Ciss) @ Vds
1200pF @ 16V
功率 - 最大
8.3W
安裝類型
表面貼裝
封裝/外殼
TO-261-4，TO-261AA
供應商設備封裝
SOT-223
包裝
帶卷 (TR)
其它名稱
NTF6P02T3GOSNTF6P02T3GOS-NDNTF6P02T3GOSTR

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