鈮?/div>
10
碌s)
Total Power Dissipation @ T
A
= 25擄C (Note 1)
Total Power Dissipation @ T
A
= 25擄C (Note 2)
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting T
J
= 25擄C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 3.6 A, L = 10 mH, V
DS
= 60 Vdc)
Thermal Resistance
鈥?Junction to Ambient (Note 1)
鈥?Junction to Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
Value
60
60
鹵
15
鹵
20
2.0
1.2
6.0
2.1
1.3
0.014
鈥?5 to
175
65
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/擄C
擄C
mJ
5L175
L
WW
= Device Code
= Location Code
= Work Week
1
4
G
S
MARKING
DIAGRAM
I
D
I
D
I
DM
P
D
2
3
SOT鈥?23
CASE 318E
STYLE 3
5L175
LWW
T
J
, T
stg
E
AS
PIN ASSIGNMENT
擄C/W
R
胃JA
R
胃JA
T
L
72.3
114
260
擄C
4
Drain
1. When surface mounted to an FR4 board using 1鈥?pad size, 1 oz. (Cu. Area
0.995 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2鈥?.4 oz. (Cu. Area 0.272 in
2
).
1
2
3
Gate
Drain
Source
ORDERING INFORMATION
Device
NTF3055L175T1
NTF3055L175T3
Package
SOT鈥?23
SOT鈥?23
Shipping
1000 Tape & Reel
4000 Tape & Reel
4000 Tape & Reel
NTF3055L175T3LF SOT鈥?23
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 1
Publication Order Number:
NTF3055L175/D