鈮?/div>
10
碌s)
Total Power Dissipation @ TA = 25擄C (Note 1.)
Total Power Dissipation @ TA = 25擄C (Note 2.)
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)
Thermal Resistance
鈥?Junction to Ambient (Note 1.)
鈥?Junction to Ambient (Note 2.)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
Value
60
60
鹵
20
鹵
30
2.0
1.2
6.0
2.1
1.3
0.014
鈥?5 to
175
65
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/擄C
擄C
mJ
5160
L
WW
= Device Code
= Location Code
= Work Week
1
4
G
S
MARKING
DIAGRAM
ID
ID
IDM
PD
2
3
SOT鈥?23
CASE 318E
STYLE 3
5160
LWW
TJ, Tstg
EAS
PIN ASSIGNMENT
擄C/W
R
胃JA
R
胃JA
TL
72.3
114
260
擄C
4
Drain
1. When surface mounted to an FR4 board using 1鈥?pad size,
(Cu. Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2鈥?.4 oz. (Cu. Area 0.272 in2).
1
2
3
Gate
Drain
Source
ORDERING INFORMATION
Device
NTF3055鈥?60T1
NTF3055鈥?60T3
NTF3055鈥?60T3LF
Package
Shipping
SOT鈥?23 1000 Tape & Reel
SOT鈥?23 4000 Tape & Reel
SOT鈥?23 4000 Tape & Reel
漏
Semiconductor Components Industries, LLC, 2001
1
July, 2001 鈥?Rev. 0
Publication Order Number:
NTF3055鈥?60/D