NTE909 & NTE909D
Integrated Circuits
Operational Amplifier
Description:
These devices are monolithic operational amplifiers intended for general鈥損urpose applications. Op-
eration is completely specified over the range of voltages commonly used for these devices. The de-
sign, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the
class鈥揃 output stage gives a large output capability with minimum power drain.
External components are used to frequency compensate the amplifier. Although the unity鈥揼ain com-
pensation network specified will make the amplifiers unconditionally stable in all feedback configura-
tions, compensation can be tailored to optimize high鈥揻requency performance for any gain setting.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift
at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the am-
plifier.
Absolute Maximum Ratings:
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵18V
Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵10V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵10V
Output Short鈥揅ircuit Duration (T
A
= +25擄C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 seconds
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0擄 to +70擄C
Lead Temperature (Soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300擄C
Note 1 For operating at elevated temperatures, the device must be derated based on a 100擄C maxi-
mum junction temperature and a thermal resistance 150擄C/W junction to ambient or 45擄C/W,
junction to case for the metal can package.
Electrical Characteristics:
(0擄C
鈮?/div>
T
A
=
鈮?/div>
+70擄C,
鹵9V 鈮?/div>
V
S
鈮?鹵15V,
C1 = 5000pF, R1 = 1.5k,
C2 = 200pF and R2 = 51鈩?unless otherwise specified)
Parameter
Input Offset Voltage
Input Bias Current
Input Offset Current
Test Conditions
T
A
= +25擄C, R
S
鈮?/div>
10k鈩?/div>
T
A
= +25擄C
T
A
= T
MIN
T
A
= +25擄C
T
A
= T
MIN
T
A
= T
MAX
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
2.0
300
0.36
100
75
125
Max
7.5
1500
2.0
500
400
750
Unit
mV
nA
碌A
nA
nA
nA
NTE909 產(chǎn)品屬性
NTE
置換半導體
否
1
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