NTE70
Silicon NPN Transistor
High Voltage Power Amp, Switch
Description:
The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes
a manufacturing technology that provides surface stabilization for high voltage operation and en-
hances long term reliability.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Emitter Cutoff Current
Collector Cutoff Current
V
(BR)CEO
I
C
= 50mA
I
EBO
I
CEX
V
EB
= 6V
V
CE
= Rated V
CB
, V
EB
= 1.5V
V
CE
= Rated V
CB
, V
EB
= 1.5V, T
C
= +150擄C
ON Characteristics
(Note 1)
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
h
FE
V
CE(sat)
V
BE(sat)
V
CE
= 4V, I
C
= 20A
I
C
= 50A, I
B
= 10A
I
C
= 20A, I
B
= 2A
I
C
= 50A, I
B
= 10A
50
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3.0
1.8
3.5
V
V
V
150
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鈥?/div>
100
10
1.0
V
碌A(chǔ)
碌A(chǔ)
mA
Symbol
Test Conditions
Min Typ Max Unit
Note 1. Pulse Test: Pulse Width = 300碌s, Duty Cycle
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NTE7023 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE7023相關(guān)型號(hào)PDF文件下載
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