NTE346
Silicon NPN Transistor
RF Power Transistor
Description:
The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency mul-
tiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
or pre鈥揹river stages, in VHF and UHF equipment.
Features:
D
Current鈥揋ain鈥揃andwidth Product鈥揻
T
= 500MHz (Min) @ I
C
= 50mAdc
D
Power Gain鈥揋
pe
= 10dB (Min) @ V
CE
=12Vdc
D
1 Watt Minimum Power Output @ f = 175MHz
D
Multiple鈥揈mitter Construction for Excellent High鈥揊requency Performance
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Collector Current鈥揅ontinuous, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Base Current鈥揅ontinuous. I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.71mW/擄C
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5Wa
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 5mA, I
B
= 0
V
CER(sus)
I
C
= 5mA, R
BE
= 10鈩?/div>
I
CEO
I
CEV
Emitter Cutoff Current
I
EBO
V
CE
= 12V, I
B
= 0
V
CE
= 40V, V
BE
= 鈥?.5V
V
CE
= 12V, V
BE
= 鈥?.5V, T
C
= +150擄C
V
EB
= 2V, I
C
= 0
20
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.02
0.1
5.0
0.1
V
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
NTE346 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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