NTE320/NTE320F
Silicon NPN RF Power Transistor
40W @ 175MHz
Description:
The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large鈥搒ignal
amplifier applications required in commercial and industrial equipment operating to 300MHz.
Features:
D
Specified 12.5V, 175MHz Characteristics:
Output Power: 40W
Minimum Gain: 4.5dB
Efficiency: 70%
D
Available in Two Different Package Styles:
T72 Stud Mount: NTE320
W52K Flange Mount: NTE320F
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (T
C
= +25擄C, Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 460mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Stud Torque (NTE320 Only, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5in. lb.
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly, use 5in. lb.
1
2
3
