NTE319P
Silicon NPN Transistor
VHF Amp
w
/Forward AGC
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation (T
A
= +25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/擄C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?/div>
鹵1/32鈥?/div>
from case, 10sec), T
L
. . . . . . . . . . . . . . . +230擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Current Gain鈥揃andwidth Product
Power Gain
Capacitance
Noise Figure
Symbol
Test Conditions
Min
20
3
鈥?/div>
20
鈥?/div>
20
300
27
鈥?/div>
鈥?/div>
Typ Max
鈥?/div>
鈥?/div>
鈥?/div>
80
鈥?/div>
鈥?/div>
鈥?/div>
29
2.7
鈥?/div>
鈥?/div>
50
220
2.75
鈥?/div>
500
鈥?/div>
5.0
V
V
MHz
dB
pF
dB
Unit
V
V
nA
V
(BR)CBO
I
C
= 100碌A(chǔ), I
E
= 0
V
(BR)EBO
I
E
= 100碌A(chǔ), I
C
= 0
I
CBO
h
FE
V
CE(sat)
f
T
G
pe
C
cb
NF
V
CB
= 20V, I
E
= 0
I
C
= 2mA, V
CE
= 10V
I
C
= 10mA, I
B
= 5mA
I
C
= 2mA, V
CE
= 10V,
f = 100MHz
V
BE
= 2V, f = 45MHz
I
E
= 0, V
CB
= 10V, f = 1MHz
V
BE
= 2V, f = 45MHz
Collector鈥揈mitter Sustaining Voltage V
CEO(sus)
I
C
= 1mA, I
B
= 0
0.13 0.22
NTE319 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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