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NTE3035A Datasheet

  • NTE3035A

  • Phototransistor Detector

  • 24.79KB

  • 2頁(yè)

  • NTE

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NTE3035A
Phototransistor Detector
Description:
The NTE3035A is designed for a wide variety of industrial processing and control applications requir-
ing a sensitive detector. The NTE3034A is is an identical package and is designed to be used with
the NTE3029A infrared emitter.
Features:
D
Miniature, Low Profile, Clear Plastic Package
D
Designed for Automatic Handling and Accurate Positioning
D
Side Looking, with Molded Lens
D
High Volume, Economical
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25擄C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +100擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +100擄C
Lead Temperature (During Soldering, 1/16鈥?from case, 5sec max., Note 2), T
L
. . . . . . . . . . +260擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Dark Current
Collector鈥揈mitter Breakdown Voltage
Capacitance
Symbol
I
D
C
ce
Test Conditions
V
CE
= 10V, H
[
0
V
CC
= 5V, f = 1MHz
Min
鈥?/div>
60
鈥?/div>
Typ Max Unit
鈥?/div>
鈥?/div>
3.9
100
鈥?/div>
鈥?/div>
nA
V
pF
V
(BR)CEO
I
C
= 10mA, H
[
0
Optical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Light Current
Turn鈥揙n Time
Turn鈥揙ff Time
Saturation Voltage
Wavelength of Maximum Sensitivity
Symbol
I
L
t
on
t
off
V
CE(sat)
s
Test Conditions
V
CE
= 5V, H = 500碌W/cm
2
,
= 940nm
H = 500碌W/cm
2
, V
CC
= 5V,
R
L
= 100鈩?/div>
鈩?/div>
H = 500碌W/cm
2
,
= 940nm,
I
C
= 2mA, V
CC
= 5V
Min
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ Max Unit
25
125
150
0.75
0.8
鈥?/div>
鈥?/div>
鈥?/div>
1.0
鈥?/div>
mA
碌s
碌s
V
碌m
Note 1. Measured with device soldered into a typical PC board.
Note 2. Heat sink should be applied to leads during soldering to prevent case temperature from ex-
ceeding +100擄C.

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