NTE2341(NPN) & NTE2342 (PNP)
Silicon Complementary Transistors
Darlington Driver
Description:
The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a
TO92 type package designed for general purpose, low frequency applications and as relay drivers.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation, P
tot
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
T
A
= +25擄C, Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . 156K/W
Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm
x 10mm.
Electrical Characteristics:
(T
J
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitterBreakdown Voltage
Collector鈥揃aseBreakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Test Conditions
Min
80
100
5
鈥?/div>
鈥?/div>
鈥?/div>
1000
2000
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
500
100
100
鈥?/div>
鈥?/div>
Unit
V
V
V
nA
nA
nA
V
(BR)CEO
I
C
= 50mA, I
B
= 0
V
(BR)CBO
I
C
= 100碌A(chǔ), I
B
= 0
V
(BR)EBO
I
E
= 100碌A(chǔ), I
C
= 0
I
CEO
I
CBO
I
EBO
h
FE
V
CE
= 40V, I
B
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 4V, I
C
= 0
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
NTE2341(NPN)相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
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