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NTD2955T4G Datasheet

  • NTD2955T4G

  • Power MOSFET

  • 8頁

  • ONSEMI

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NTD2955
Power MOSFET
鈭?0 V, 鈭?2 A, P鈭扖hannel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low鈭抳oltage, high鈭?/div>
speed switching applications in power supplies, converters, and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
http://onsemi.com
V
(BR)DSS
鈭?0 V
R
DS(on)
TYP
155 mW @ 鈭?0 V, 6 A
I
D
MAX
鈭?2 A
鈥?/div>
Avalanche Energy Specified
鈥?/div>
I
DSS
and V
DS(on)
Specified at Elevated Temperature
鈥?/div>
Designed for Low鈭扸oltage, High鈭扴peed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
鈥?/div>
Pb鈭扚ree Packages are Available
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
鈭?Continuous
鈭?Non鈭抮epetitive (t
p
鈮?/div>
10 ms)
Drain Current
Drain Current
鈭?Continuous @ T
a
= 25擄C
Drain Current
鈭?Single Pulse (t
p
鈮?/div>
10 ms)
Total Power Dissipation @ T
a
= 25擄C
Operating and Storage Temperature
Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 12 Apk, L = 3.0 mH, R
G
= 25
W)
Thermal Resistance
鈭?Junction鈭抰o鈭扖ase
鈭?Junction鈭抰o鈭扐mbient (Note 1)
鈭?Junction鈭抰o鈭扐mbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
Symbol
V
DSS
V
GS
V
GSM
I
D
I
DM
P
D
T
J
, T
stg
E
AS
Value
鈭?0
鹵
20
鹵
25
鈭?2
鈭?6
55
鈭?5 to
175
216
Unit
Vdc
Vdc
Vpk
Adc
Apk
W
擄C
mJ
1 2
3
G
P鈭扖hannel
D
S
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
STYLE 2
AYW
NT2955
2
1
3
Drain
Gate
Source
4
Drain
AYW
NT2955
1 2 3
Gate Drain Source
NT2955
A
Y
W
Device Code
= Assembly Location
= Year
= Work Week
4
R
qJC
R
qJA
R
qJA
T
L
2.73
71.4
100
260
擄C/W
4
DPAK鈭?
CASE 369D
STYLE 2
1
2
擄C
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in
2
).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
漏
Semiconductor Components Industries, LLC, 2004
1
October, 2004 鈭?Rev. 7
Publication Order Number:
NTD2955/D

NTD2955T4G 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 12A

  • 180 毫歐 @ 6A，10V

  • 4V @ 250µA

  • 30nC @ 10V

  • 750pF @ 25V

  • 55W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • DPAK-3

  • 帶卷 (TR)

  • NTD2955T4GOSTR

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