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NTD24N06T4G Datasheet

  • NTD24N06T4G

  • Power MOSFET 60 V, 24 A, N−Channel DPAK

  • 8頁

  • ONSEMI

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NTD24N06
Power MOSFET
60 V, 24 A, N鈭扖hannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
http://onsemi.com
V
(BR)DSS
60 V
R
DS(on)
TYP
32 mW
N鈭扖hannel
D
I
D
MAX
24 A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Drain鈭抰o鈭扜ate Voltage (R
GS
= 10 MW)
Gate鈭抰o鈭扴ource Voltage
鈭?/div>
Continuous
鈭?/div>
Non鈭抮epetitive (t
p
v10
ms)
Drain Current
鈭?/div>
Continuous @ T
A
= 25擄C, T
J
= 150擄C
鈭?/div>
Continuous @ T
A
= 25擄C, T
J
= 175擄C
鈭?/div>
Continuous @ T
A
= 100擄C, T
J
= 175擄C
鈭?/div>
Single Pulse (t
p
v10
ms),
T
J
= 175擄C
Total Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Power Dissipation @ T
A
= 25擄C (Note 1)
Total Power Dissipation @ T
A
= 25擄C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche Ener-
gy
鈭?/div>
Starting T
J
= 25擄C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 18 A, V
DS
= 60 Vdc)
Thermal Resistance
鈭?/div>
Junction鈭抰o鈭扖ase
鈭?/div>
Junction鈭抰o鈭扐mbient (Note 1)
鈭?/div>
Junction鈭抰o鈭扐mbient (Note 2)
Maximum Lead Temperature for Soldering Pur-
poses, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GS
I
D
I
D
I
D
Value
60
60
"20
"30
24
27
19
80
62.5
0.42
1.88
1.36
鈭?5
to
+175
162
Unit
Vdc
Vdc
Vdc
S
G
MARKING DIAGRAMS
Adc
Adc
Adc
Apk
W
W/擄C
W
W
擄C
mJ
4
1 2
4
Drain
YWW
24N06
2
1
3
Drain
Gate
Source
4
Drain
YWW
24N06
2
1 2 3
Gate Drain Source
= Device Code
= Year
= Work Week
24N06
Y
WW
Publication Order Number:
NTD24N06/D
I
DM
P
D
T
J
, T
stg
E
AS
3
DPAK
CASE 369C
Style 2
4
R
qJC
R
qJA
R
qJA
T
L
2.4
80
110
260
擄C/W
1
擄C
3
DPAK
CASE 369D
Style 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR鈭? board using the 0.5 sq in drain pad size.
2. When surface mounted to an FR鈭? board using the minimum recommended
pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
錚?/div>
Semiconductor Components Industries, LLC, 2005
January, 2005
鈭?/div>
Rev. 3
1

NTD24N06T4G 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 24A

  • 42 毫歐 @ 10A,10V

  • 4V @ 250µA

  • 48nC @ 10V

  • 1200pF @ 25V

  • 1.36W

  • 表面貼裝

  • TO-252-3,DPak(2 引線+接片),SC-63

  • DPAK-3

  • 帶卷 (TR)

  • NTD24N06T4GOSNTD24N06T4GOS-NDNTD24N06T4GOSTR

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