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NTD20N06G Datasheet

  • NTD20N06G

  • Power MOSFET

  • 83.77KB

  • 8頁

  • ONSEMI

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NTD20N06
Power MOSFET
20 Amps, 60 Volts, N鈭扖hannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
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Pb鈭扚ree Packages are Available
Lower R
DS(on)
Lower V
DS(on)
Lower Capacitances
Lower Total Gate Charge
Lower and Tighter V
SD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
http://onsemi.com
V
(BR)DSS
60 V
R
DS(on)
TYP
37.5 mW
N鈭扖hannel
D
I
D
MAX
20 A
Typical Applications
G
S
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Drain鈭抰o鈭扜ate Voltage (R
GS
= 10 MW)
Gate鈭抰o鈭扴ource Voltage
鈭?Continuous
鈭?Non鈭抮epetitive (t
p
v10
ms)
Drain Current
鈭?Continuous @ T
A
= 25擄C
鈭?Continuous @ T
A
= 100擄C
鈭?Single Pulse (t
p
v10
ms)
Total Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Power Dissipation @ T
A
= 25擄C (Note 1)
Total Power Dissipation @ T
A
= 25擄C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 18.4 A, V
DS
= 60 Vdc)
Thermal Resistance
鈭?Junction鈭抰o鈭扖ase
鈭?Junction鈭抰o鈭扐mbient (Note 1)
鈭?Junction鈭抰o鈭扐mbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GS
I
D
I
D
I
DM
P
D
Value
60
60
"20
"30
Adc
20
10
60
60
0.40
1.88
1.36
鈭?5 to
175
170
Unit
Vdc
Vdc
Vdc
1 2
3
4
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
4
Drain
AYWW
20N06
2
1
3
Drain
Gate
Source
4
Drain
4
AYWW
20N06
1 2 3
Gate Drain Source
20N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
DPAK鈭?
CASE 369D
STYLE 2
1
2
Apk
W
W/擄C
W
W
擄C
mJ
3
T
J
, T
stg
E
AS
擄C/W
R
qJC
R
qJA
R
qJA
T
L
2.5
80
110
260
擄C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size.
漏
Semiconductor Components Industries, LLC, 2004
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
August, 2004 鈭?Rev. 6
Publication Order Number:
NTD20N06/D

NTD20N06G 產(chǎn)品屬性

  • 75

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 20A

  • 46 毫歐 @ 10A，10V

  • 4V @ 250µA

  • 30nC @ 10V

  • 1015pF @ 25V

  • 1.36W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • DPAK-3

  • 管件

  • NTD20N06G-NDNTD20N06GOS

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