音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

NTD12N10T4G Datasheet

  • NTD12N10T4G

  • Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement&...

  • 8頁

  • ONSEMI

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

NTD12N10
Preferred Device
Power MOSFET
12 Amps, 100 Volts N鈭扖hannel
Enhancement鈭扢ode DPAK
Features
鈥?/div>
Pb鈭扚ree Package is Available
鈥?/div>
Source鈭抰o鈭扗rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Avalanche Energy Specified
鈥?/div>
I
DSS
and R
DS(on)
Specified at Elevated Temperature
鈥?/div>
Mounting Information Provided for the DPAK Package
Typical Applications
http://onsemi.com
V
(BR)DSS
100 V
R
DS(on)
TYP
165 mW @ 10 V
N鈭扖hannel
D
I
D
MAX
12 A
鈥?/div>
PWM Motor Controls
鈥?/div>
Power Supplies
鈥?/div>
Converters
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Drain鈭抰o鈭扴ource Voltage (R
GS
= 1.0 MW)
Gate鈭抰o鈭扴ource Voltage
鈭?Continuous
鈭?Non鈭扲epetitive (t
p
鈮?/div>
10 ms)
Drain Current 鈭?Continuous @ T
A
= 25擄C
Drain Current
鈭?Continuous @ T
A
=100擄C
Drain Current
鈭?Pulsed (Note 3)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ T
A
= 25擄C (Note 1)
Total Power Dissipation @ T
A
= 25擄C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L
= 12 Apk, L = 1.0 mH, R
G
= 25
W)
Thermal Resistance
鈭?Junction to Case
鈭?Junction to Ambient (Note 1)
鈭?Junction to Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
P
D
Value
100
100
鹵
20
鹵
30
12
7.0
36
56.6
0.38
1.76
1.28
鈭?5 to
+175
75
Unit
Vdc
Vdc
4
Vdc
Vpk
Adc
Apk
W
W/擄C
W
W
擄C
mJ
1
擄C/W
R
qJC
R
qJA
R
qJA
T
L
2.65
85
117
260
擄C
2
4
1 2
3
G
S
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
AYWW
T12
N10
4
Drain
DPAK鈭?
CASE 369D
(Straight Lead)
STYLE 2
AYWW
T12
N10
1 2 3
Gate Drain Source
T12N10
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
2
1
3
Drain
Gate
Source
T
J
, T
stg
E
AS
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
3. Pulse Test: Pulse Width = 10
ms,
Duty Cycle = 2%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2004
1
August, 2004 鈭?Rev. 6
Publication Order Number:
NTD12N10/D

NTD12N10T4G 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • N-Channel

  • 100 V

  • +/- 20 V

  • 12 A

  • 0.165 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • DPAK

  • Reel

  • 7 S

  • - 55 C

  • 56.6 W

  • 2500

  • 22 ns

NTD12N10T4G相關(guān)型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！