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NTD12N10T4G Datasheet

  • NTD12N10T4G

  • Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement&...

  • 8頁

  • ONSEMI

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NTD12N10
Preferred Device
Power MOSFET
12 Amps, 100 Volts N鈭扖hannel
Enhancement鈭扢ode DPAK
Features
鈥?/div>
Pb鈭扚ree Package is Available
鈥?/div>
Source鈭抰o鈭扗rain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
鈥?/div>
Avalanche Energy Specified
鈥?/div>
I
DSS
and R
DS(on)
Specified at Elevated Temperature
鈥?/div>
Mounting Information Provided for the DPAK Package
Typical Applications
http://onsemi.com
V
(BR)DSS
100 V
R
DS(on)
TYP
165 mW @ 10 V
N鈭扖hannel
D
I
D
MAX
12 A
鈥?/div>
PWM Motor Controls
鈥?/div>
Power Supplies
鈥?/div>
Converters
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Drain鈭抰o鈭扴ource Voltage (R
GS
= 1.0 MW)
Gate鈭抰o鈭扴ource Voltage
鈭?Continuous
鈭?Non鈭扲epetitive (t
p
鈮?/div>
10 ms)
Drain Current 鈭?Continuous @ T
A
= 25擄C
Drain Current
鈭?Continuous @ T
A
=100擄C
Drain Current
鈭?Pulsed (Note 3)
Total Power Dissipation
Derate above 25擄C
Total Power Dissipation @ T
A
= 25擄C (Note 1)
Total Power Dissipation @ T
A
= 25擄C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L
= 12 Apk, L = 1.0 mH, R
G
= 25
W)
Thermal Resistance
鈭?Junction to Case
鈭?Junction to Ambient (Note 1)
鈭?Junction to Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
P
D
Value
100
100
鹵
20
鹵
30
12
7.0
36
56.6
0.38
1.76
1.28
鈭?5 to
+175
75
Unit
Vdc
Vdc
4
Vdc
Vpk
Adc
Apk
W
W/擄C
W
W
擄C
mJ
1
擄C/W
R
qJC
R
qJA
R
qJA
T
L
2.65
85
117
260
擄C
2
4
1 2
3
G
S
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
AYWW
T12
N10
4
Drain
DPAK鈭?
CASE 369D
(Straight Lead)
STYLE 2
AYWW
T12
N10
1 2 3
Gate Drain Source
T12N10
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
2
1
3
Drain
Gate
Source
T
J
, T
stg
E
AS
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
3. Pulse Test: Pulse Width = 10
ms,
Duty Cycle = 2%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2004
1
August, 2004 鈭?Rev. 6
Publication Order Number:
NTD12N10/D

NTD12N10T4G 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • N-Channel

  • 100 V

  • +/- 20 V

  • 12 A

  • 0.165 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • DPAK

  • Reel

  • 7 S

  • - 55 C

  • 56.6 W

  • 2500

  • 22 ns

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