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NTB5605PT4 Datasheet

  • NTB5605PT4

  • Power MOSFET

  • 8頁

  • ONSEMI

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上傳產(chǎn)品規(guī)格書

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NTB5605P
Power MOSFET
鈭?0 V, 鈭?8.5 A, P鈭扖hannel, D
2
PAK
Features
鈥?/div>
Designed for Low R
DS(on)
鈥?/div>
Withstands High Energy in Avalanche and Commutation Modes
Applications
V
(BR)DSS
鈭?0 V
http://onsemi.com
R
DS(on)
TYP
120 mW @ 鈭?.0 V
I
D
MAX
鈭?8.5 A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Supplies
PWM Motor Control
Converters
Power Management
P鈭扖hannel
D
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Parameter
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
A
= 25擄C
T
A
= 25擄C
Symbol
V
DSS
V
GS
I
D
P
D
I
DM
T
J
,
T
STG
E
AS
Value
鈭?0
$20
鈭?8.5
88
鈭?5
鈭?5 to
175
338
Unit
V
V
A
W
A
擄C
mJ
2
3
4
D
2
PAK
CASE 418B
STYLE 2
G
S
t
p
= 10
ms
1
Operating Junction and Storage Temperature
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy (V
DD
= 25 V, V
GS
= 5.0 V, I
PK
= 15 A,
L = 3.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8鈥?from case for 10 s)
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
T
L
260
擄C
THERMAL RESISTANCE RATINGS
Parameter
Junction鈭抰o鈭扖ase (Drain) 鈥?Steady State
Symbol
R
qJC
Max
1.7
Unit
擄C/W
NTB5605P
YWW
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1鈥?pad size (Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.41 in
2
).
Drain
Gate
Source
NTB5605P = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
NTB5605P
NTB5605PT4
Package
D
2
PAK
D
2
PAK
Shipping
鈥?/div>
50 Units/Rail
800/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
August, 2004 鈭?Rev. 1
Publication Order Number:
NTB5605P/D

NTB5605PT4 產(chǎn)品屬性

  • 800

  • 分離式半導體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 18.5A

  • 140 毫歐 @ 8.5A，5V

  • 2V @ 250µA

  • 22nC @ 5V

  • 1190pF @ 25V

  • 88W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 帶卷 (TR)

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