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NM93CS56N Datasheet

  • NM93CS56N

  • (MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial...

  • 14頁(yè)

  • NSC

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NM93CS06 CS46 CS56 CS66 (MICROWIRE Bus Interface)
256- 1024- 2048- 4096-Bit Serial EEPROM with Data Protect and Sequential Read
August 1994
NM93CS06 CS46 CS56 CS66
(MICROWIRE
TM
Bus Interface) 256- 1024- 2048- 4096-Bit
Serial EEPROM with Data Protect and Sequential Read
General Description
The NM93CS06 CS46 CS56 CS66 devices are 256
1024 2048 4096 bits respectively of CMOS non-volatile
electrically erasable memory divided into 16 64 128
256 16-bit registers Selected registers can be protected
against data modification by programming the Protect Reg-
ister with the address of the first register to be protected
against data modification (all registers greater than or equal
to the selected address are then protected from further
change) Additionally this address can be 鈥樷€榣ocked鈥欌€?into the
device making all future attempts to change data impossi-
ble These devices are fabricated using National Semicon-
ductor floating-gate CMOS process for high reliability high
endurance and low power consumption The NM93CSXX
Family is offered in an SO package for small space consid-
erations
The EEPROM interfacing is MICROWIRE compatible pro-
viding simple interfacing to standard microcontrollers and
microprocessors There are a total of 10 instructions 5
which operate on the EEPROM memory and 5 which oper-
ate on the Protect Register The memory instructions are
READ WRITE WRITE ALL WRITE ENABLE and WRITE
DISABLE The Protect register instructions are PRREAD
PRWRITE PRENABLE PRCLEAR and PRDISABLE
Features
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Write protection in a user defined section of memory
Sequential register read
Typical active current of 400
mA
and standby current of
25
mA
No erase required before write
Reliable CMOS floating gate technology
MICROWIRE compatible serial I O
Self timed write cycle
Device status during programming mode
40 year data retention
Endurance 10
6
data changes
4 5V to 5 5V operation in all modes of operation
Packages available 8-pin SO 8-pin DIP
Block Diagram
TL D 10750 鈥?1
TRI-STATE is a registered trademark of National Semiconductor Corporation
MICROWIRE
TM
is a trademark of National Semiconductor Corporation
C
1995 National Semiconductor Corporation
TL D 10750
RRD-B30M75 Printed in U S A

NM93CS56N 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • -

  • 管件

  • 停產(chǎn)

  • 非易失

  • EEPROM

  • EEPROM

  • 2Kb

  • 128 x 16

  • Microwire

  • 1 MHz

  • 10ms

  • -

  • 4.5V ~ 5.5V

  • 0°C ~ 70°C（TA）

  • 通孔

  • 8-DIP（0.300"，7.62mm）

  • 8-DIP

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