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NIF5003NT1 Datasheet

  • NIF5003NT1

  • Self−Protected FET with Temperature and Current Limit

  • 5頁

  • ONSEMI

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NIF5003N
Preferred Device
Self鈭扨rotected FET
with Temperature and
Current Limit
42 V, 14 A, Single N鈭扖hannel, SOT鈭?23
HDPlus鈩?devices are an advanced series of power MOSFETs which
utilize ON Semiconductors latest MOSFET technology process to
achieve the lowest possible on鈭抮esistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain鈭抰o鈭扜ate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate鈭抰o鈭扴ource Clamp.
Features
http://onsemi.com
V
DSS
(Clamped)
42 V
I
D
MAX
(Limited)
14 A
R
DS(on)
TYP
53 mW @ 10 V
Drain
Overvoltage
Protection
M
PWR
Gate
Input
R
G
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb鈭扚ree Packages are Available
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage Internally Clamped
Gate鈭抰o鈭扴ource Voltage
Drain Current
Continuous
Total Power Dissipation
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 2)
Thermal Resistance
Junction鈭抰o鈭扖ase
Junction鈭抰o鈭扐mbient (Note 1)
Junction鈭抰o鈭扐mbient (Note 2)
Single Pulse Drain鈭抰o鈭扴ource Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 40 Vdc, I
L
= 3.2 Apk, L = 120 mH,
R
G
= 25
W)
Operating and Storage Temperature Range
(Note 3)
Symbol
V
DSS
V
GS
I
D
P
D
1.25
1.9
擄C/W
R
qJC
R
qJA
R
qJA
E
AS
12
100
65
400
mJ
Value
42
"14
Unit
Vdc
Vdc
1
2
3
4
SOT鈭?23
CASE 318E
STYLE 3
Internally Limited
W
MARKING DIAGRAM
1
GATE
AYW
5003N
G
G
2
DRAIN
3
SOURCE
4
DRAIN
T
J
, T
stg
鈭?5 to 150
擄C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412鈥?square) FR4 PCB, 1 oz cu.
2. Mounted onto 1鈥?square pad size (1.127鈥?square) FR4 PCB, 1 oz cu.
3. Normal pre鈭抐ault operating range. See thermal limit range conditions.
A
= Assembly Location
Y
= Year
W
= Work Week
5003N = Specific Device Code
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2006
1
April, 2006 鈭?Rev. 2
Publication Order Number:
NIF5003N/D

NIF5003NT1 產(chǎn)品屬性

  • 1,000

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • HDPlus™

  • 低端

  • 非反相

  • 1

  • 53 毫歐

  • -

  • 14A

  • -

  • -55°C ~ 150°C

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223

  • 帶卷 (TR)

  • NIF5003NT1OSTR

NIF5003NT1相關(guān)型號PDF文件下載

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  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    NIF5002N Self-Protected FET w/Temperature and Current Limit ...
    ON Semiconductor
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self-protected FET with Temperature and Current Limit 42 V, ...
    ON Semiconductor
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...

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