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NIF5002NT3 Datasheet

  • NIF5002NT3

  • Self-Protected FET with Temperature and Current Limit

  • 6頁(yè)

  • ONSEMI

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NIF5002N
Preferred Device
Self鈭扨rotected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N鈭扖hannel, SOT鈭?23
HDPlus鈩?devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on鈭抮esistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain鈭抰o鈭扜ate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate鈭抰o鈭扴ource Clamp.
Features
http://onsemi.com
V
(BR)DSS
(Clamped)
42 V
R
DS(ON)
TYP
165 mW @ 10 V
I
D
MAX
2.0 A*
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Protection
M
PWR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Gate
Input
R
G
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Applications
鈥?/div>
Lighting
鈥?/div>
Solenoids
鈥?/div>
Small Motors
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage Internally Clamped
Drain鈭抰o鈭扜ate Voltage Internally Clamped
(R
G
= 1.0 MW)
Gate鈭抰o鈭扴ource Voltage
Continuous Drain Current
Power Dissipation
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 2)
@ T
T
= 25擄C (Note 3)
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
Value
42
42
"14
1.1
1.7
8.9
鈭?5 to
150
150
Unit
V
V
V
5002N
L
YM
SOT鈭?23
CASE 318E
Style 3
GATE
Source
MARKING
DIAGRAM
1
4
DRAIN
ONLYM
5002N
2
DRAIN
3
SOURCE
(Top View)
= Specific Device Code
= Location Code
= Year, Month
Internally Limited
W
Operating Junction and Storage Temperature
Single Pulse Drain鈭抰o鈭扴ource Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A,
L = 300 mH, R
G(ext)
= 25
W)
T
J
, T
stg
E
AS
擄C
mJ
ORDERING INFORMATION
Device
NIF5002NT1
NIF5002NT3
Package
SOT鈭?23
SOT鈭?23
Shipping
鈥?/div>
1000/Tape & Reel
4000/Tape & Reel
THERMAL RESISTANCE RATINGS
Rating
Junction鈭抰o鈭扐mbient 鈭?Steady State (Note 1)
Junction鈭抰o鈭扐mbient 鈭?Steady State (Note 2)
Junction鈭抰o鈭扵ab 鈭?Steady State (Note 3)
Symbol
R
qJA
R
qJA
R
qJT
Value
114
72
14
Unit
擄C/W
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Surface鈭抦ounted onto min pad FR4 PCB, (2 oz. Cu, 0.06鈥?thick).
2. Surface鈭抦ounted onto 2鈥?sq. FR4 board (1鈥?sq., 1 oz. Cu, 0.06鈥?thick).
3. Surface鈭抦ounted onto min pad FR4 PCB, (2 oz. Cu, 0.06鈥?thick).
漏
Semiconductor Components Industries, LLC, 2004
Preferred
devices are recommended choices for future use
and best overall value.
1
January, 2004 鈭?Rev. 5
Publication Order Number:
NIF5002N/D

NIF5002NT3 產(chǎn)品屬性

  • 4,000

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān)

  • HDPlus™

  • 低端

  • 非反相

  • 1

  • 165 毫歐

  • -

  • 2A

  • -

  • -55°C ~ 150°C

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223

  • 帶卷 (TR)

  • NIF5002NT3OS

NIF5002NT3相關(guān)型號(hào)PDF文件下載

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  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    NIF5002N Self-Protected FET w/Temperature and Current Limit ...
    ON Semiconductor
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-Protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self-protected FET with Temperature and Current Limit 42 V, ...
    ON Semiconductor
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...

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