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NID5003NT4 Datasheet

  • NID5003NT4

  • 42 V, 20 A, Single N−Channel, DPAK

  • 6頁(yè)

  • ONSEMI

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NID5003N
Preferred Device
Self鈭扨rotected FET
with Temperature and
Current Limit
42 V, 20 A, Single N鈭扖hannel, DPAK
HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on鈭抮esistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain鈭抰o鈭扜ate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate鈭抰o鈭扴ource Clamp.
Features
http://onsemi.com
V
DSS
(Clamped)
42 V
I
D
MAX
(Limited)
20 A*
R
DS(on)
TYP
42 mW @ 10 V
Drain
Overvoltage
Protection
M
PWR
Gate
Input
R
G
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MOSFET MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage Internally Clamped
Gate鈭抰o鈭扴ource Voltage
Drain Current
Total Power Dissipation
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 2)
Thermal Resistance
Junction鈭抰o鈭扖ase
Junction鈭抰o鈭扐mbient (Note 1)
Junction鈭抰o鈭扐mbient (Note 2)
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 3.2 Apk, L = 120 mH, R
G
= 25
W)
Operating and Storage Temperature Range
(Note 3)
Continuous
Symbol
V
DSS
V
GS
I
D
P
D
1.3
2.3
擄C/W
R
qJC
R
qJA
R
qJA
E
AS
3.0
95
54
600
mJ
Value
42
"14
Unit
Vdc
Vdc
DPAK
CASE 369C
STYLE 2
D5003N
A
Y
W
= Device Code
= Assembly Location
= Year
= Work Week
1
2
3
MARKING
DIAGRAM
AYW
D5003N
1 = Gate
2 = Drain
3 = Source
Internally Limited
W
ORDERING INFORMATION
Device
NID5003NT4
Package
DPAK
Shipping
鈥?/div>
2500/Tape & Reel
T
J
, T
stg
鈭?5 to
150
擄C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted onto minimum pad size (0.412鈥?square) FR4 PCB, 1 oz cu.
2. Mounted onto 1鈥?square pad size (1.127鈥?square) FR4 PCB, 1 oz cu.
3. Normal pre鈭抐ault operating range. See thermal limit range conditions.
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
*Max current may be limited below this value
depending on input conditions.
漏
Semiconductor Components Industries, LLC, 2004
1
August, 2004 鈭?Rev. 2
Publication Order Number:
NID5003N/D

NID5003NT4 產(chǎn)品屬性

  • 2,500

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開(kāi)關(guān)

  • HDPlus™

  • 低端

  • 非反相

  • 1

  • 42 毫歐

  • -

  • 20A

  • -

  • -55°C ~ 150°C

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • DPAK-3

  • 帶卷 (TR)

  • NID5003NT4OSTR

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