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NGB8202NT4 Datasheet

  • NGB8202NT4

  • 20 A, 400 V, N−Channel D2PAK

  • 8頁

  • ONSEMI

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NGB8202N
Ignition IGBT
20 A, 400 V, N鈭扖hannel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
http://onsemi.com
鈥?/div>
Ideal for Coil鈭抩n鈭扨lug and Driver鈭抩n鈭扖oil Applications
鈥?/div>
Gate鈭扙mitter ESD Protection
鈥?/div>
Temperature Compensated Gate鈭扖ollector Voltage Clamp Limits
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate鈭扙mitter Resistor (R
GE
)
20 AMPS
400 VOLTS
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
.
4.5 V
C
G
R
G
R
GE
Applications
鈥?/div>
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Collector鈭扙mitter Voltage
Collector鈭扜ate Voltage
Gate鈭扙mitter Voltage
Collector Current鈭扖ontinuous
@ T
C
= 25擄C
鈭?/div>
Pulsed
Continuous Gate Current
Transient Gate Current (t鈮? ms, f鈮?00 Hz)
ESD (Charged鈭扗evice Model)
ESD (Human Body Model)
R = 1500
W,
C = 100 pF
ESD (Machine Model) R = 0
W,
C = 200 pF
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating & Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
I
G
I
G
ESD
ESD
ESD
P
D
T
J
, T
stg
Value
440
440
"15
20
50
1.0
20
2.0
8.0
500
150
1.0
鈭?5
to +175
Unit
V
V
V
A
DC
A
AC
mA
mA
kV
kV
V
Watts
W/擄C
擄C
D
2
PAK
CASE 418B
STYLE 4
E
MARKING
DIAGRAM
NG
B8202N
YWW
NGB8202N = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
NGB8202NT4
Package
D
2
PAK
Shipping
鈥?/div>
800 / Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
錚?/div>
Semiconductor Components Industries, LLC, 2005
January, 2005
鈭?/div>
Rev. 1
1
Publication Order Number:
NGB8202N/D

NGB8202NT4 產(chǎn)品屬性

  • 800

  • 分離式半導體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 440V

  • 1.9V @ 4.5V，20A

  • 20A

  • 150W

  • 邏輯

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 帶卷 (TR)

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